C-ring defect ground structure-based LTCC miniaturized power gain equalizer

A defect-based structure and power gain technology, applied in waveguide-type devices, electrical components, circuits, etc., can solve the problems of low dielectric constant of substrate and large size of microstrip equalizer, and increase the degree of freedom in structure and design. , Easy to adjust the response curve, the effect of large amount of balance

Inactive Publication Date: 2016-12-07
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

At present, the commonly used equalizer is a microstrip equalizer. Due to the low dielectric constant of the substrate used in the low frequency band, the size of the microstrip equalizer in the low frequency band is generally too large.

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  • C-ring defect ground structure-based LTCC miniaturized power gain equalizer

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with accompanying drawing and specific embodiment:

[0019] Such as figure 1 As shown, the LTCC miniaturized power gain equalizer based on the C-ring defect ground structure of the present invention has five layers in total, including the first metal layer 1, the first dielectric layer 2, and the second metal layer 3 stacked sequentially from top to bottom. , the second dielectric layer 4 and the third metal layer 5 . The first metal layer 1 , the second metal layer 3 and the third metal layer 5 are printed on the surface of the dielectric layer by LTCC process.

[0020] The first metal layer 1 includes a main transmission line 10 in a strip shape.

[0021] The first dielectric layer 2 includes a plate-shaped first dielectric substrate 20 , and first metallized through holes 21 and second metallized through holes 22 are symmetrically disposed on left and right sides of the first dielectric substrate ...

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Abstract

The invention discloses a C-ring defect ground structure-based LTCC miniaturized power gain equalizer, which comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer, wherein the above layers are sequentially stacked from top to bottom. The first dielectric layer is symmetrically provided with two metallized through holes. The second metal layer comprises a first impedance resonator microstrip, a second impedance resonator microstrip, a first resistor and a second resistor, wherein the first resistor, the first metallized through hole and the first impedance resonator microstrip form a series structure. The second resistor, the second metallized through hole and the second impedance resonator microstrip form a series structure. The third metal layer is symmetrically provided with a first C-ring defect ground groove and a second C-ring defect ground groove. The power gain equalizer is small in size, large in balance amount and small in insertion loss. Therefore, the power gain equalizer is suitable for adjusting the gain flatness of a high-power source that is working within a microwave frequency band.

Description

technical field [0001] The invention belongs to the technical field of microwave and millimeter wave power devices, in particular to an LTCC miniaturized power gain equalizer based on a C-ring defect ground structure. Background technique [0002] Gain equalizer is a network used to correct amplitude distortion. It is usually used in conjunction with traveling wave tubes to solve the problem of amplitude distortion. It is a key technology in power drive modules. Equalizers are mainly divided into three types according to the transmission line form: microstrip type, waveguide type and coaxial type. The basic principles of the three types of gain equalizers are the same, and they are all composed of a transmission line main line and several resonant absorption units connected to the transmission line main line. The two ends of the main line of the transmission line are used as input and output ports. The resonant absorbing unit is used to selectively absorb energy at a specif...

Claims

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Application Information

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IPC IPC(8): H01P9/00
CPCH01P9/003
Inventor 夏雷花证郎小元江栋一翟思
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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