High consistency resistive random access memory and preparation method thereof

Abstract

The invention provides a high consistency resistive random access memory and a preparation method thereof, and belongs to the technical field of CMOS very large scale integration. The resistive random access memory comprises a substrate and a lower electrode-resistance variation film-upper electrode structure which is located on the substrate; the lower electrode is located on the substrate; the resistance variation film is located between the upper and lower electrodes; the resistance variation film is locally doped with metals; and the doped region is 50% to 10% of a device working area. A conducting channel of the resistive random access memory is more easily fused at a locally doped area, thus random generation and fusion of the conducting channel are limited in the locally doped area, the randomness of the conducting channel is effectively reduced, and the consistency of the resistive random access memory is improved.

Description

technical field [0001] The invention belongs to the technical field of non-volatile memory (Non-volatile Memory) in semiconductor (semiconductor) and CMOS ultra-large-scale integration (ULSI), in particular to a resistive random access memory (resistive random access memory) with high consistency Device structure design and fabrication method. Background technique [0002] Since the invention of the transistor, the development of semiconductor and integrated circuit technology has promoted the progress of the entire information industry and even technology. For nearly half a century, following the prediction of Moore's Law, the integration level of memory devices based on CMOS technology has grown rapidly at a rate of doubling every 18 months. However, as the feature size continues to shrink, especially after entering the nano-scale node, the size reduction of the current mainstream memories will reach the limit. Traditional non-volatile memory is facing more and more chal...

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Problems solved by technology

[0004] However, due to the random generation and fusing characteristics of the conductive channel in the resistive memory, it will cause problems with the consistency of the device, that is, the parameters of the corresponding resistive change, such as operating voltage, high-resistance state and low-resistance state resistance. Will fluctuate between different devices and different switching processes of the same device

This unstable characteristic restricts the improvement of the integration density of resistive memory, and also increases the difficulty of peripheral circuit design. Therefore, reducing device volatility and improving device consistency are of great significance for the industrial application of resistive memory.

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