Method for improving uniformity of lengthways physical structure and optical property of porous silicon

Abstract

The invention discloses a method for improving uniformity of a lengthways physical structure and an optical property of porous silicon. According to the method, in a process of preparing the porous silicon, on the one hand, a corrosive temperature of corrosive liquid is gradually increased, and a capability of corroding silicon lengthways by hydrofluoric acid molecules is higher and higher, so the porosity of the porous silicon in the lengthways direction is reduced as a corrosive depth is increased; and on the other hand, under a corrosive condition with normal constant current density, as the corrosive depth is increased, the porosity is increased or a refractive index is reduced. Under a certain condition, dynamic balance is achieved; the porosity of the porous silicon film along the lengthways direction is kept consistent; the uniformity of the lengthways physical structure of the inner surface of the porous silicon film is increased; and the uniformity of the lengthways physical structure and the optical property of porous silicon film is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the uniformity of the longitudinal physical structure and optical properties of porous silicon. Background technique [0002] In 1990, Canham discovered that porous silicon emits visible light at room temperature. This discovery opened up a new era for the research of porous silicon, that is, the research stage of luminescent porous silicon at room temperature; Display technology and other aspects of broad application prospects. In 1996, the realization of optoelectronic integrated circuits based on porous silicon made this prospect more attractive, but because its luminous performance has not been effectively improved, the research and application of porous silicon luminescence and devices have not made significant progress. There are also few literatures that systematically study the influence of the microstructure of porous silicon on its optical...

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of equipment complexity and uniformity of the vertical physical structure brought about by the current method of decreasing corrosion current density to the uniformity of porous silicon, the purpose of the present invention is to provide a method that can improve the vertical physical structure of porous silicon. and methods for uniformity of optical properties