A kind of ggnmos device used as ESD protection and its manufacturing method

Abstract

The invention discloses a GGNMOS (Gate-Grounded N-channel Metal Oxide Semiconductor) device applied to ESD (Electro-Static discharge) protection and a manufacturing method thereof. A P-type doping region is arranged in a drain extension region of a GGNMOS to form a floating reverse diode with a drain NLDD (N-type Lightly Doped Drain) doping region, so that distribution of drain ESD current is changed; ESD leakage current is deviated from the surface of the drain extension region and a conducting channel; the cooling capability during ESD discharge of the GGNMOS is enhanced; secondary breakdown current during snapback of the device is increased; and the ESD protection capability of the GGNMOS device is enhanced.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor integrated circuits, and more particularly, to a GGNMOS device used for ESD protection and a manufacturing method thereof. Background technique [0002] see figure 1 , figure 1 It is an existing GGNMOS device for ESD protection. Such as figure 1 As shown, the GGNMOS device is formed on a semiconductor silicon substrate 10, which has a gate (Gate) 14 and N-type doped source terminals (Source) 11 and 12 and a drain terminal (Drain) 17 located on both sides of the gate. and 16. In existing GGNMOS (gate grounded NMOS) devices used for ESD (electrostatic discharge) protection, in order to improve the ESD leakage capability of GGNMOS devices, an asymmetric source and drain structure is usually used in GGNMOS devices, that is, the drain terminal Do extension treatment, and add non-metallic silicide region 15 (silicide blocking) in the drain extension region (drain extension) to i...

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Problems solved by technology

[0003] However, in the above structure, since the current during ESD leakage mainly flows on the surface of the drain diffusion region (draindiffusion) and the channel (channel) (as indicated by the arrow in the figure), and the thermal conductivity of silicon is Gate oxide is hundreds of times, so the gate oxide layer 13 (Gate oxide) is a poor conductor of heat, and the silicon substrate 10 (substrate silicon) is relatively a good conductor of heat, so the closer the ESD conduction current is to the drain terminal The surface of the diffusion region and the surface of the channel are more unfavorable to the dissipation of the heat generated by the ESD discharge current, so it is easier to cause the melting of the gate oxide layer 13 and cause various failures of the device

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