High electron mobility transistor device and manufacturing method thereof

Abstract

The invention provides a high electron mobility transistor device, relating to the technical field of semiconductors. The first dielectric layer of the device is on a semiconductor layer between a gate and source and drain electrodes. A first source field plate is on the first dielectric layer between the gate and the drain electrode. A second dielectric layer is on the gate, the first source field plate and the first dielectric layer. A second source field plate is on the gate and the first source field plate. The first source field plate and the second source field plate weaken the strong electric field close to a gate area between the gate and the drain electrode. The probability of the failure of the first dielectric layer and the second dielectric layer under long-time stress and high voltage stress is little. According to the device, the strong electric field close to the gate area between the gate and the drain electrode can be weakened, and the probability of the failure of the dielectric layers between the gate and the source field plates can be reduced. The invention also provides a manufacturing method of the high electron mobility transistor device, the process is simple, and the reliability of the manufactured device is high.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high electron mobility transistor device and a manufacturing method thereof. Background technique [0002] The dielectric breakdown electric field of the third-generation semiconductor gallium nitride (GaN) is much higher than that of the first-generation semiconductor silicon (Si) or the second-generation semiconductor gallium arsenide (GaAs), and its value is as high as 3MV / cm , so that the electronic device can withstand very high voltage. At the same time, gallium nitride can form a heterojunction structure with other gallium-based compound semiconductors (eg, Group III nitride semiconductors). Since group III nitride semiconductors have strong spontaneous polarization and piezoelectric polarization effects, they can form a two-dimensional electron gas (2DEG) channel with a high electron concentration near the interface of the heterojunction, and this heterostructur...

AI Technical Summary

Problems solved by technology

When the high electron mobility transistor 002 works under long-term stress and high-voltage stress, there is a long-term high electric field between the T-shaped gate 232 and the source field plate 020, which makes the dielectric layer 010 on the side wall of the step 030 very prone to Failure, resulting in a short circuit between the T-shaped gate 232 and the source field plate 020, thereby reducing the reliability of the high electron mobility transistor 002

[0006] In view of the above-mentioned HEMT using the conventional source field plate technology, there is a problem that the reliability of the device is reduced due to the failure of the dielectric layer between the gate and the source field plate, and it is necessary to provide a highly reliable HEMT and its manufacturing method

Images