Top-emitting qled device and method of making the same
A top emission and device technology, applied in the field of top emission QLED devices and their preparation, can solve the problems of short service life, complex preparation method, low quantum efficiency, etc., and achieve the effects of reducing preparation cost, simplifying preparation process, and simple process
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[0026] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0027] combine figure 1 , an embodiment of the present invention provides a top-emitting QLED device, including a substrate 1, a patterned pixel electrode 2, an electron transport layer 3, a quantum dot light-emitting layer 6, a hole transport layer 7, a hole injection layer 8 and An anode 9, a transport intermediate layer 5 is stacked between the electron transport layer 3 and the quantum dot light-emitting layer 6, an insulating layer 4 of an array structure is disposed between the pixel electrodes of the patterned pixel electrode 2, the The insulating layer 4 penetrates the electron tra...
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