Top-emitting qled device and method of making the same

A top emission and device technology, applied in the field of top emission QLED devices and their preparation, can solve the problems of short service life, complex preparation method, low quantum efficiency, etc., and achieve the effects of reducing preparation cost, simplifying preparation process, and simple process

Active Publication Date: 2019-05-24
TCL CORPORATION
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a top-emitting QLED device and its preparation method, aiming at solving the problems of short service life, low quantum efficiency, efficiency decay under high current density, and relatively complicated preparation method of QLED devices prepared in the prior art

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  • Top-emitting qled device and method of making the same
  • Top-emitting qled device and method of making the same
  • Top-emitting qled device and method of making the same

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Embodiment Construction

[0026] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0027] combine figure 1 , an embodiment of the present invention provides a top-emitting QLED device, including a substrate 1, a patterned pixel electrode 2, an electron transport layer 3, a quantum dot light-emitting layer 6, a hole transport layer 7, a hole injection layer 8 and An anode 9, a transport intermediate layer 5 is stacked between the electron transport layer 3 and the quantum dot light-emitting layer 6, an insulating layer 4 of an array structure is disposed between the pixel electrodes of the patterned pixel electrode 2, the The insulating layer 4 penetrates the electron tra...

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Abstract

The invention provides a top-emitting QLED device, comprising a substrate, a patterned pixel electrode, an electron transport layer, a quantum dot light-emitting layer, a hole transport layer, a hole injection layer and an anode arranged in sequence, the electron transport layer and the A transport intermediate layer is stacked between the quantum dot light-emitting layers, an insulating layer with an array structure is provided between the pixel electrodes of the patterned pixel electrodes, and the insulating layer penetrates the electron transport layer and the transport intermediate layer connected, and the transmission intermediate layer and the insulating layer are both made of PMMA material; on the transmission intermediate layer and corresponding to the insulating layer, isolation columns for isolating quantum dot materials of different colors are provided.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a top-emitting QLED device and a preparation method thereof. Background technique [0002] In recent years, compared with organic luminescent dyes or traditional inorganic phosphors, colloidal quantum dots (QDs) have shown excellent photochemical properties, such as a wide absorption range, high fluorescence quantum efficiency, good optical and chemical stability, narrow Emission bandwidth, adjustable emission wavelength size, excellent luminous efficiency and ease of processing have become the most powerful contenders for the next generation of displays. With the development of technology and the accumulation of knowledge, the performance of quantum dot light-emitting diodes (QLEDs) has been rapidly improved. Compared with organic light-emitting diodes (OLEDs), QLEDs have shown great advantages in energy saving and cost control, showing that Huge application potential. [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/18H10K2102/3026H10K71/00
Inventor 张滔向超宇李乐辛征航张东华
Owner TCL CORPORATION
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