Novel uncooled infrared focal plane detector pixel and fabrication method thereof

Abstract

The invention discloses a novel uncooled infrared focal plane detector pixel and a fabrication method thereof and belongs to the uncooled infrared focal plane detector technical field. The novel uncooled infrared focal plane detector pixel comprises three layers of structures which are located on a semiconductor substrate sequentially from bottom to top, wherein the first layer of bridge structure includes a metal reflection layer, an insulating dielectric layer, a first supporting layer, a first supporting layer protection layer, a first metal electrode layer and a first silicon nitride dielectric layer, the second layer of thermal conversion structure includes a second supporting layer, a second supporting layer protection layer, a second metal electrode layer, a second silicon nitride dielectric layer, a thermal sensitive layer and a heat sensitive layer protection layer, and the third layer of absorption structure includes a third supporting layer, an absorption layer and an absorption protection layer. The invention also discloses a fabrication method of the novel uncooled infrared focal plane detector pixel. With the novel uncooled infrared focal plane detector pixel provided by the invention adopted, the absorption rate of infrared radiation can be obviously improved, the response rate of a detector can be improved, and a foundation can be laid for the manufacture of larger-array and smaller-pixel detectors.

Description

technical field [0001] The invention relates to a novel uncooled infrared focal plane detector pixel and a manufacturing method thereof, belonging to the technical field of the uncooled infrared focal plane detector. Background technique [0002] With the gradual reduction of pixel size, the target radiation energy absorbed by a single sensor is significantly reduced. In order to maintain a relatively consistent sensor sensitivity, the sensor's responsivity must be increased. The responsivity of the sensor depends on the pixel size, the thermal conductance between the sensor and the substrate, the optical absorption efficiency of the sensor and the performance of the heat-sensitive material. In the traditional double-layer microbridge structure, the first layer is a bridge leg support structure composed of slender bridge legs, which is used to improve the thermal conduction between the sensor and the substrate. The second layer consists of a vanadium oxide layer that absor...

AI Technical Summary

Problems solved by technology

However, as the pixel size shrinks, this structure will not be able to meet the needs of high-absorption detector pixels

In addition, due to the limited height of the resonant cavity of this structure, the range of infrared wavelengths that can be detected is limited, mainly concentrated in the range of 8-14 μm

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