Equipment and method for preparing ultrathin black silicon wafer

Abstract

The invention provides equipment and method for preparing an ultrathin black silicon wafer. According to the method, silicon particles are put into a graphite crucible and are melted by virtue of electrical heating, a water platform of a quartz growth platform is slightly lower than the graphite crucible, two silicon carbide silk threads (with an interval of 156mm) are horizontally pulled by virtue of a servo motor, a cooling cover is arranged above the quartz growth platform and is used for cooling silicon liquid by virtue of high-speed cold air, the silicon wafer continuously grows under a thermal capillary action to form an ultrathin polycrystalline silicon wafer and is cut after growing to a required length, and the cut silicon wafer is added into space pile type PECVD equipment to be subjected to RIE wool making, so as to form the ultrathin black silicon wafer.

Description

[0001] 【Technical field】 [0002] The invention relates to the technical field of solar cells, in particular to an ultra-thin black silicon wafer manufacturing equipment and method. [0003] 【Background technique】 [0004] The existing silicon wafer preparation technology is cutting from silicon ingots, and cutting ultra-thin silicon wafers (less than 100um) will cause a high fragmentation rate, so finding a method to directly prepare ultra-thin silicon wafers can greatly reduce the cost of solar cells. the cost of. At present, the method of directly growing silicon wafers is to use silk wires to pull them vertically. Due to the limitation of vertical space, silicon wafers need to be cut when they grow to a certain length, and they need to be re-wired and restarted. The production rate is limited. [0005] Therefore, it is necessary to provide an improved technical solution to overcome the above problems. [0006] 【Content of invention】 [0007] The object of the present inv...

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Problems solved by technology

[0004] The existing silicon wafer preparation technology is cutting from silicon ingots, and cutting ultra-thin silicon wafers (less than 100um) will cause a high fragmentation rate, so finding a method to directly prepare ultra-thin silicon wafers can greatly reduce the cost of solar cells. the cost of

At present, the method of directly growing silicon wafers is to use silk wires to vertically pull them up. Due to the limitation of vertical space, silicon wafers need to be cut when they grow to a certain length, and they need to be re-wired to start the machine. The production rate is limited.

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