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A kind of preparation method of non-high temperature liquid phase growth graphene

A technology of graphene and liquid phase method is applied in the field of preparation of graphene grown by non-high temperature liquid phase method, which can solve the problems of high cost, low production efficiency and high processing cost, and achieve the effects of low pollution, low cost and good performance.

Active Publication Date: 2018-11-09
北京晟岱克科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The production process has poor stability, and the product structure is uncertain. The production process uses strong acids and strong oxidants, causing serious environmental pollution and high processing costs.
[0006] 2. CVD graphene has good performance, but the cost is extremely high and the production efficiency is extremely low
Moreover, the number of graphene layers produced by this method, size and quality are difficult to control, and high-quality graphene films cannot be obtained.

Method used

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  • A kind of preparation method of non-high temperature liquid phase growth graphene
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Embodiment 1

[0026] like figure 1 Shown, a kind of preparation method of non-high-temperature liquid-phase growth graphene of the present invention, its technical feature is that preparation method comprises the steps: a kind of preparation method of non-high-temperature liquid-phase growth graphene, its technical feature is that preparation method The method comprises the steps of: igniting the cold plasma 3 placed in the reaction chamber 2 in a protective gas, placing a container 4 of an organic solvent 5 working in a non-high temperature state in the plasma 3, and then introducing a gaseous carbon source 1 into the In the ignited cold plasma 3, the above-mentioned gaseous carbon source is activated and cracked or the liquid carbon source is evaporated and then activated and cracked, and the cracked carbon is fully dissolved in the above-mentioned organic solvent 5; the supercooled target film 7 is immersed in the The organic solvent 5 makes the carbon dissolved in the organic solvent 5 ...

Embodiment 2

[0030] A method for preparing graphene grown by a non-high temperature liquid phase method of the present invention is characterized in that the preparation method includes the following steps: a method for preparing graphene grown by a non-high temperature liquid phase method is characterized in that the preparation method includes the following steps Ignite the cold plasma 3 placed in the reaction chamber 2 in the protective gas, place the container 4 of the organic solvent 5 working in a non-high temperature state in the plasma 3, then introduce the liquid carbon source 1 into the ignited cold In the plasma 3, the above-mentioned gaseous carbon source is activated and cracked or the liquid carbon source is evaporated and then activated and cracked, and the cracked carbon is fully dissolved in the above-mentioned organic solvent 5; the above-mentioned organic solvent 5 in which carbon has been dissolved is transported to another In the container 11 of a reaction chamber 10; t...

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Abstract

The invention relates to a preparation method of graphene grown by adopting a non-high temperature liquid phase method. The preparation method is technically characterized by comprising the following steps: igniting a cold plasma in protective gas, putting a non-high temperature organic solvent in the plasma, then introducing a gaseous or liquid carbon source into the ignited cold plasma, activating and cracking the gaseous carbon source or activating and cracking the evaporated liquid carbon source and fully dissolving cracked carbon in the organic solvent; immersing a super-cooled target film into the organic solvent, so that the carbon dissolved in the organic solvent is subjected to supersaturated precipitation on the super-cooled target film, and a grapheme film is formed on the super-cooled target film. The graphene prepared by the preparation method of the graphene grown by adopting the non-high temperature liquid phase method, provided by the invention, has the advantages of being good in quality, low in cost, high in efficiency and less in pollution and can directly grow on the target film without transfer.

Description

technical field [0001] The invention relates to the field of preparation of new materials, in particular to a method for preparing graphene grown by a non-high temperature liquid phase method. Background technique [0002] Graphene is a carbon atom with sp 2 A two-dimensional crystal with a honeycomb lattice formed by hybridization. In 2004, Andre Geim and Konstantin Novoselov of the University of Manchester successfully separated graphene from graphite, for which they won the 2010 Nobel Prize in Physics. [0003] Graphene has excellent properties. First, the specific surface area of ​​graphene is very large, up to 2630m 2 / g. Second, carbon atoms in graphene are represented by sp 2 Each carbon atom and its adjacent three carbon atoms form a stable carbon-carbon bond through a σ bond, so that graphene has extremely high mechanical properties, its Young's modulus can reach 1100GPa, and its fracture strength can reach Up to 130GPa. Again, the π electrons in graphene are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/188
CPCC01B2204/04
Inventor 孙旭阳
Owner 北京晟岱克科技有限公司
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