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Nonpolar nanocolumn LED grown on lithium gallate substrate and its preparation method

A non-polar, lithium gallate technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as unstable chemical properties of substrates, and achieve the effect of eliminating adverse effects, improving growth rate and productivity, and uniform orientation

Active Publication Date: 2018-10-30
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But LiGaO 2 The chemical properties of the substrate are unstable at high temperature, so it is necessary to make LiGaO 2 GaN-based nanopillar LEDs on substrates can truly achieve large-scale applications, so it is necessary to look for LiGaO 2 A new method and process for growing GaN-based nanocolumn LEDs on substrates

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  • Nonpolar nanocolumn LED grown on lithium gallate substrate and its preparation method
  • Nonpolar nanocolumn LED grown on lithium gallate substrate and its preparation method
  • Nonpolar nanocolumn LED grown on lithium gallate substrate and its preparation method

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Embodiment 1

[0050] The preparation method of the nanocolumn LED grown on the lithium gallate substrate of the present embodiment comprises the following steps:

[0051] (1) Selection of substrate and its crystal orientation: use LiGaO 2 The substrate, with the (100) plane offset from the (110) direction by 0.6° as the epitaxial plane;

[0052] (2) Surface polishing, cleaning, and annealing of the substrate. The specific process of the annealing is: put the substrate into the annealing chamber, and treat LiGaO in an air atmosphere at 880°C 2 The substrate was annealed for 3 hours and then air-cooled to room temperature;

[0053] The surface polishing of the substrate is specifically: firstly LiGaO 2 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then polished by chemical mechanical polishing;

[0054] The cleaning is specifically: the LiGaO 2 The substrate was ultras...

Embodiment 2

[0066] The preparation method of the nanocolumn LED grown on the lithium gallate substrate of the present embodiment comprises the following steps:

[0067] (1) Selection of substrate and its crystal orientation: use LiGaO 2 The substrate, with the (100) plane offset from the (110) direction by 0.5° as the epitaxial plane;

[0068] (2) Substrate surface polishing, cleaning and annealing treatment. The specific process of the annealing is: put the substrate into the annealing chamber, and treat the LiGaO 2 The substrate was annealed for 4 hours and then air-cooled to room temperature;

[0069] The surface polishing of the substrate is specifically: firstly LiGaO 2 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then polished by chemical mechanical polishing;

[0070] The cleaning is specifically: the LiGaO 2 The substrate was ultrasonically cleaned in deio...

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Abstract

Disclosed are a nanorod LED grown on a lithium gallate substrate and a preparation method therefor. The nonpolar nanorod LED grown on the lithium gallate substrate comprises an LiGaO2 substrate (10), a GaN nanorod array (11) grown on the LiGaO2 substrate, a non-doped GaN layer (13) grown on the GaN nanorod array, an n-type doped GaN layer (14) grown on the non-doped GaN layer, an InGaN / GaN quantum well (15) grown on the n-type doped GaN layer, and a p-type doped GaN layer (16) grown on the InGaN / GaN quantum well, wherein the GaN nanorod array is a nonpolar GaN nanorod array. The selected lithium gallate substrate is low in material cost; the prepared nanorod array is controllable in dimensions and uniform in orientation; and the resulting nonpolar nanorod LED has a low defect density, and excellent electrical and optical properties.

Description

technical field [0001] The invention relates to the field of nano-array LED growth and preparation, in particular to the field of growing on lithium gallate (LiGaO 2 ) nanocolumn LED on the substrate and its preparation method. Background technique [0002] GaN and its related group III nitrides have excellent electrical, optical, and acoustic properties, and have been widely used in the preparation of light-emitting diodes (LEDs), laser diodes (LDs), and field-effect transistors. In recent years, GaN-based nanopillar LEDs have attracted much attention as a potential LED structure. Compared with planar LEDs, nanopillar LEDs have a high surface-to-volume ratio (area / volume), which can significantly reduce wear and tear. Dislocation density; secondly, nano-column LEDs can greatly improve the light-emitting efficiency of LEDs and realize light coupling and output; finally, by controlling the size of nano-column LEDs and changing the light-emitting wavelength of nano-column LED...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/24H01L33/00
CPCH01L33/007H01L33/06H01L33/24
Inventor 李国强王文樑杨美娟
Owner SOUTH CHINA UNIV OF TECH
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