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electro-optic modulator

An electro-optic modulator and modulation technology, which is applied in the field of optoelectronic communication, can solve the problems of low modulation efficiency and small bandwidth of electro-optic modulators, and affect the information transmission speed of silicon-based electro-optic modulators, so as to improve bandwidth, increase modulation bandwidth, and improve modulation efficiency effect

Active Publication Date: 2021-06-01
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The modulation efficiency of electro-optic modulators with PIN structure and PN structure is low, and silicon-based electro-optic modulators with MOS structures have high modulation efficiency and are widely cited, but their bandwidth is small, which affects the silicon-based electro-optic modulators via the MOS structure. Information transmission speed of electro-optic modulator

Method used

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Embodiment Construction

[0049] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0050] Please also refer to Figure 1 to Figure 3 , figure 1 The top view of the electro-optic modulator of the first preferred embodiment provided by the present invention; figure 2 Schematic diagram of the cross-sectional structure of the electro-optic modulator along the A-A' line of the first preferred embodiment provided by the present invention; image 3 It is a schematic cross-sectional structure diagram of the electro-optic modulator of the first pr...

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Abstract

An electro-optic modulator (100) for modulating an electrical signal into an optical carrier. The electro-optic modulator (100) comprises: an input waveguide (g1), a beam splitter (g2), two symmetrical modulation arms (e, f), a beam combiner (h2), and an output waveguide (h1). The modulation arm (e, f) includes a modulation area waveguide, a traveling wave electrode (190) and a grating structure (a, b); the modulation area waveguide is a metal-oxide-semiconductor MOS structure; the grating structure (a , b) configured on both sides of the waveguide in the modulation area; the effective refractive index of the electrical signal on the traveling wave electrode (190) is the same as that of the modulation area with the grating structure configured on both sides of the optical carrier The group indices of refraction in the waveguides are matched, enabling the bandwidth of the electro-optic modulator to be increased.

Description

technical field [0001] The invention relates to the field of photoelectric communication, in particular to an electro-optic modulator. Background technique [0002] In recent years, as silicon-based materials have continuously made breakthroughs in the field of optics, people have re-understood the development prospects of silicon materials in the field of optoelectronic integration. Silicon photonics devices are moving towards small size, high speed and high stability. Silicon-based electro-optic modulators have been developed as a common device in silicon photonics. Silicon-based electro-optic modulators use the carrier dispersion effect in silicon materials, that is, change the concentration of carriers in silicon materials to change the refractive index of silicon materials, and then modulate the light passing through silicon materials. However, changing the concentration of carriers in silicon materials depends on a certain electrical structure. The three structures ...

Claims

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Application Information

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IPC IPC(8): G02F1/025
CPCG02F1/025
Inventor 冀瑞强曾理
Owner HUAWEI TECH CO LTD
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