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Photodiode, photodiode array, and solid-state image pickup element

A photodiode and array technology, applied in the direction of electric solid-state devices, diodes, electrical components, etc., can solve the problems of increased dark current and weakened signal charge separation ability, and achieve the effect of low dark current and high sensitivity

Active Publication Date: 2017-03-22
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In Patent Document 1, in order to suppress the dark current on the surface, although the depletion of the surface is suppressed, there is a possibility that the signal charge separation capability between pixels is weakened
In Patent Document 2, the p+ type semiconductor layer and the separation part are p-type, although the edge breakdown is suppressed, but the dark current increases due to the formation of a large-scale depletion layer on the substrate surface

Method used

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  • Photodiode, photodiode array, and solid-state image pickup element
  • Photodiode, photodiode array, and solid-state image pickup element
  • Photodiode, photodiode array, and solid-state image pickup element

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Experimental program
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Effect test

Embodiment approach 1

[0025] First, refer to figure 1 as well as figure 2 , the structures of the photodiode and the solid-state imaging device according to Embodiment 1 will be described.

[0026] figure 1 is a cross-sectional view of a photodetector including a photodiode according to Embodiment 1, figure 2 is a plan view of the photodiode according to the first embodiment. In addition, in order to clearly show the arrangement of photodiodes in plan view, the figure 2 There is a partial perspective view in . and, figure 2 yes figure 1 Plan view of interface S1 shown. In addition, in this specification, "planar view" refers to a situation seen from the normal direction of the interface S1 and the interface S2.

[0027] The photodiode 1 according to the present embodiment includes a P − type semiconductor layer 11 , N + type semiconductor regions 12 and 13 arranged in the P − type semiconductor layer 11 , and a P type semiconductor region 14 .

[0028] The P-type semiconductor layer 11...

Embodiment approach 2

[0059] Next, refer to Figure 4 as well as Figure 5 , the structures of the photodiode and the solid-state imaging device according to the embodiment will be described.

[0060] Figure 4 is a cross-sectional view of a photodetector including a photodiode according to Embodiment 2, Figure 5 It is a plan view of the photodiode according to the second embodiment. and, Figure 5 In order to clearly show the arrangement of photodiodes in a plan view, a part is a perspective view. and, Figure 5 yes Figure 4 Plan view of interface S1 shown.

[0061] The photodiode 2 according to Embodiment 2 differs from the photodiode 1 according to Embodiment 1 in that it has an N + -type semiconductor region 15 having a higher impurity concentration than the P − -type semiconductor layer 11 . Hereinafter, the same points as those of the photodiode 1 according to Embodiment 1 will be omitted, and the differences will be mainly described.

[0062] The N+ type semiconductor region 15 is...

Embodiment approach 3

[0076] Next, refer to Figure 6 as well as Figure 7 , the structures of the photodiode array and the solid-state imaging device according to the embodiment will be described.

[0077] Figure 6 is a cross-sectional view of a photodetector including a photodiode array according to Embodiment 3, Figure 7 is a plan view of the photodiode array according to the third embodiment. and, Figure 7 yes Figure 6 Plan view of interface S1 shown.

[0078] The photodiode array 3 according to the present embodiment is composed of a plurality of pixels 30 , and each pixel 30 includes a photodiode. The photodiode includes a P − type semiconductor layer 11 , N + type semiconductor regions 12 and 13 arranged in the P − type semiconductor layer 11 , and a P type semiconductor region 14 .

[0079] The P-type semiconductor layer 11 is a semiconductor layer having an interface S1 as a first surface and an interface S2 as a second surface, and the interface S1 is opposed to the interface S...

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Abstract

A photodiode (1) that multiplies, in an avalanche region, charges generated by means of photoelectric conversion is provided with: a P-type semiconductor layer (11) having an interface (S1) and an interface (S2); an N+ type semiconductor region (12) in the P- type semiconductor layer (11), said N+ type semiconductor region being in contact with the interface (S1); an N+ type semiconductor region (13) in the P- type semiconductor layer (11), said N+ type semiconductor region being connected to the N+ type semiconductor region (12); and a P type semiconductor region (14) disposed between the N+ type semiconductor region (13) and the interface (S2). The impurity concentrations of the N+ type semiconductor region (12), the N+ type semiconductor region (13), and the P type semiconductor region (14) are higher than the impurity concentration of the P- type semiconductor layer (11), the avalanche region is a region sandwiched between the N+ type semiconductor region (13) and the P type semiconductor region (14), said avalanche region being in the P- type semiconductor layer (11), and the N+ type semiconductor region (12) has an area that is smaller than that of the N+ type semiconductor region (13) in a plan view.

Description

technical field [0001] This application relates to a photodiode, a photodiode array, and a solid-state imaging device, and particularly relates to a photodiode that detects weak light. Background technique [0002] In recent years, in fields such as medical treatment, biology, and chemistry, an avalanche photodiode (Avalanche Photodiode; hereinafter referred to as APD) has been used for photon counting. APD is a photodiode that uses avalanche breakdown to multiply signal charges generated by photoelectric conversion to improve detection sensitivity. A high-sensitivity image sensor using an APD (Patent Document 1) and a photodetector that performs photon counting (Patent Document 2) have been proposed so far. [0003] (Prior art literature) [0004] (patent documents) [0005] Patent Document 1 International Publication No. 2014 / 097519 [0006] Patent Document 2 International Publication No. 2008 / 004547 [0007] In order to detect weak light by signal multiplication thro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L27/146
CPCH01L27/14609H01L27/1461H01L27/14636H01L27/1464H01L27/14643H01L27/14647H01L31/107H02S40/44Y02E10/50Y02E10/60H01L31/1075
Inventor 坂田祐辅薄田学森三佳广濑裕加藤刚久
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD