Semiconductor device manufacturing method
A device manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid device manufacturing, electrical components, circuits, etc., can solve problems such as shrinking, hindering device performance, and carrier mobility degradation, so as to simplify the process and improve device performance , Conducive to the effect of device miniaturization
Active Publication Date: 2019-09-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
However, as the concentration of germanium increases, the critical thickness of the epitaxy of silicon germanium or germanium (critical thickness, that is, more defects will be generated if the thickness exceeds this thickness) becomes smaller.
When there are more defects, the carrier mobility of the material will degrade, which hinders the improvement of device performance
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[0022] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and in combination with schematic embodiments, and a FinFET manufacturing method of a small-sized high-mobility channel capable of simplifying the process and reducing the cost is disclosed. It should be pointed out that similar reference numerals represent similar structures, and the terms "first", "second", "upper", "lower" and the like used in this application can be used to modify various device structures or manufacturing processes . These modifications do not imply spatial, sequential or hierarchical relationships of the modified device structures or fabrication processes unless specifically stated.
[0023] Such as Figure 4 as well as figure 1 As shown, the substrate is etched to form a plurality of fins.
[0024] A substrate 1 is provided, and its material can be single crystal silicon, SOI, sing...
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The invention provides a semiconductor component manufacturing method, comprising: etching a substrate to form a plurality of fins; forming STIs among the fins; forming a first high mobility layer on the fins with exposed STIs; and executing the oxidation and / or nitridation technology; transforming the first high mobility layer into a dielectric layer and transforming the fin parts with exposed STIs into a second high mobility layer. According to the semiconductor component manufacturing method of the invention, by oxidizing the high mobility material as a sacrificial layer, ion diffusion is driven so that the fins formed on the substrate material are transformed into high mobility materials. With simplified process and low cost, it is possible to improve the performance of the component and to benefit the micro-shrink of the component.
Description
technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a FinFET with a channel of small size and high mobility. Background technique [0002] In order to continue to push forward Moore's Law, the driving current of the device needs to be further improved and the short-channel effect needs to be controlled. Bulk silicon fin field-effect transistor (finfet) devices with integrated high-mobility channels are considered to be the most promising devices to promote the development of Moore's Law. [0003] The manufacturing method of the high mobility channel finfet device is usually to grow the high mobility channel material on the silicon substrate. High-mobility channels are usually made of high-mobility materials, such as germanium, silicon germanium, III--V group materials, II--VI group materials, etc. Taking silicon germanium as an example, fins made of high-mobility materials are formed...
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IPC IPC(8): H01L21/336
Inventor 秦长亮殷华湘赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI