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Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology

A pressure sensor and capacitive technology, which is applied in the field of capacitive absolute pressure and micro pressure air pressure sensor sensitive chip, can solve the problems of complex micro-nano processing procedures, expensive instruments and equipment, and high yield guarantee challenges, etc., to achieve vacuum Excellent long-term maintenance capability, guaranteed yield, and small parasitic effects

Inactive Publication Date: 2017-04-19
BEIJING RES INST OF TELEMETRY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The micro-nano processing process of this solution is complicated and difficult, requiring a lot of expensive equipment and equipment, and the guarantee of yield rate is a big challenge

Method used

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  • Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology
  • Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology

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Embodiment Construction

[0024] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0025] Such as figure 1 Shown is a schematic diagram of the structural anatomy of the sensor. It can be seen from the figure that the capacitive absolute pressure micro-pressure air pressure sensor based on SOI-MEMS technology includes an SOI wafer device layer 101, a silicon dioxide layer 102, an SOI wafer substrate layer 103 and a bond. Combined packaging cover glass 201; wherein, the SOI wafer device layer 101 is a square structure, and is horizontally located at the bottom; the silicon dioxide layer 102 is fixedly installed on the upper surface of the SOI wafer device layer 101; the SOI wafer substrate layer 103 is fixedly installed On the upper surface of the silicon dioxide layer 102; the bonding package cover glass 201 is fixedly installed on the upper surface of the SOI wafer substrate layer 103; the bonding package cover glass 201 is bo...

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Abstract

The invention discloses a capacitance-type absolute-pressure micro-pressure gas pressure sensor based on a SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology, which relates to the field of capacitance-type absolute-pressure micro-pressure gas pressure sensor sensitive chips. The capacitance-type absolute-pressure micro-pressure gas pressure sensor based on the SOI-MEMS technology comprises an SOI wafer device layer, a silicon dioxide layer, an SOI wafer substrate layer and bonded and packaged cover plate glass, wherein the SOI wafer device layer has a square structure and is horizontally located at the bottom part; the silicon dioxide layer is fixedly arranged on the upper surface of the SOI wafer device layer; the SOI wafer substrate layer is fixedly arranged on the upper surface of the silicon dioxide layer; and the bonded and packaged cover plate glass is fixedly arranged on the upper surface of the SOI wafer substrate layer. An electrode lead can be prevented from passing through a vacuum cavity packaged and bonded interface, the vacuum packaging performance and the reliability of the micro-pressure sensor are increased, the performance indexes, the consistency and the yield of the sensor can be well ensured, the needed micro-nano process is simple, and the realization cost is low.

Description

technical field [0001] The invention relates to the field of a sensitive chip of a capacitive absolute pressure and micro pressure air pressure sensor, in particular to a capacitive absolute and micro pressure air pressure sensor based on SOI-MEMS technology. Background technique [0002] Absolute pressure and micro pressure air pressure sensors are widely used in aerospace deep space meteorological exploration (lunar exploration, Mars exploration, etc.), petrochemical industry, environmental protection, medical treatment, pneumatic control of instruments and equipment, and industrial process detection and control. One of the core technical difficulties of Micro-Electro-Mechanical System (MEMS) air pressure sensors is the vacuum reference cavity and electrode leads. Compared with atmospheric pressure sensors, absolute pressure and micro pressure air pressure sensors require more High requirements, the vacuum degree of the vacuum reference chamber, long-term vacuum maintenanc...

Claims

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Application Information

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IPC IPC(8): G01L9/12
CPCG01L9/12
Inventor 焦海龙杨挺陈艳孟丽娜王建尹玉刚金小锋张世名邹江波
Owner BEIJING RES INST OF TELEMETRY
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