Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology
A pressure sensor and capacitive technology, which is applied in the field of capacitive absolute pressure and micro pressure air pressure sensor sensitive chip, can solve the problems of complex micro-nano processing procedures, expensive instruments and equipment, and high yield guarantee challenges, etc., to achieve vacuum Excellent long-term maintenance capability, guaranteed yield, and small parasitic effects
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[0024] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
[0025] Such as figure 1 Shown is a schematic diagram of the structural anatomy of the sensor. It can be seen from the figure that the capacitive absolute pressure micro-pressure air pressure sensor based on SOI-MEMS technology includes an SOI wafer device layer 101, a silicon dioxide layer 102, an SOI wafer substrate layer 103 and a bond. Combined packaging cover glass 201; wherein, the SOI wafer device layer 101 is a square structure, and is horizontally located at the bottom; the silicon dioxide layer 102 is fixedly installed on the upper surface of the SOI wafer device layer 101; the SOI wafer substrate layer 103 is fixedly installed On the upper surface of the silicon dioxide layer 102; the bonding package cover glass 201 is fixedly installed on the upper surface of the SOI wafer substrate layer 103; the bonding package cover glass 201 is bo...
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