40results about How to "Reduce thermal mismatch" patented technology

This invention provides a light-emitting diode epitaxial wafer and its fabrication method. The light-emitting diode epitaxial wafer includes a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The buffer layer includes a nitrided graphene buffer layer, an h-BN buffer layer, and a B-type GaN layer sequentially deposited on the substrate. x Al 1‑x N buffer layer, AlN buffer layer, wherein, the B x Al 1‑x The boron content in the N-buffer layer gradually decreases along the growth direction of the epitaxial layer. This invention achieves this by sequentially arranging a graphene nitride buffer layer, an h-BN buffer layer, and a boron buffer layer between the substrate and the epitaxial structure. x Al 1‑x N-buffer layers and AlN-buffer layers reduce lattice mismatch between structures, lower defect density, and improve the overall quality of LED epitaxial wafers.