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Silicon carbide surface-enhanced aluminum heat dissipation substrate and manufacturing method thereof

A technology of surface enhancement and aluminum substrate, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as complex process, high cost, and aluminum-based cost-effectiveness, and achieve improved thermomechanical properties, Not easy to crack growth, reduce thermal fatigue failure and the generation and expansion of cracks

Inactive Publication Date: 2020-04-03
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Existing silicon carbide particle-reinforced aluminum matrix composites require a high volume percentage of silicon carbide particles. The preparation process includes mechanical alloying powder metallurgy, infiltration, precision die-casting and other methods. The aluminum matrix prepared by these methods is not cost-effective. Advantages, especially when manufacturing special-shaped and finned aluminum-based heat sinks, compared with traditional aluminum substrates, the process is complex and costly

Method used

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  • Silicon carbide surface-enhanced aluminum heat dissipation substrate and manufacturing method thereof
  • Silicon carbide surface-enhanced aluminum heat dissipation substrate and manufacturing method thereof
  • Silicon carbide surface-enhanced aluminum heat dissipation substrate and manufacturing method thereof

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0025] An embodiment of the present invention provides an aluminum heat dissipation substrate with a silicon carbide surface enhanced, figure 1 It is an aluminum heat dissipation substrate with silicon carbide layers on the upper and lower surfaces. figure 2 It is a schematic diagram of nano-silicon carbide particles forming a silicon carbide layer on the surface of an aluminum substrate through a laser or electron beam sintering process. Place the aluminum substrate 1 on the workbench 5, the workbench can be fed horizontally, and evenly spread nano-silicon carbide ceramic particles 3 on the aluminum substrate 1, wherein the particle size of the nano-silicon carbide ceramic particles is 20nm-30nm; Moving forward, the nano silicon carbide ceramic particles 3 are uniformly sintered into the silicon carbide layer 2 by laser beam or electron beam 4 . Aft...

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Abstract

The invention belongs to the technical field of electronic packaging, and particularly relates to a silicon carbide surface-enhanced aluminum heat dissipation substrate and a manufacturing method. Nanometer silicon carbide ceramic particles are evenly spread on the surface of an aluminum substrate, the nanometer silicon carbide ceramic particles are sintered through laser beams or electron beams,and the surface of the aluminum substrate is evenly covered with a formed silicon carbide layer; and the nanometer silicon carbide particles at the interface permeate into the surface layer of the aluminum material to form firm interface connection. The overall thermal expansion coefficient of the aluminum heat dissipation substrate is reduced, the hardness and strength are improved, warping is reduced, thermal fatigue failure and crack generation and expansion are reduced, the thermal mechanical property of the aluminum heat dissipation substrate is improved, the aluminum heat dissipation substrate is applied to the field of electronic packaging, and the reliability of a semiconductor device can be improved.

Description

technical field [0001] The invention belongs to the technical field of electronic packaging, and in particular relates to an aluminum heat dissipation substrate with a silicon carbide surface enhanced and a manufacturing method thereof. Background technique [0002] The packaging of electronic devices tends to be more dense, thinner, and miniaturized, resulting in high device power density and serious heat dissipation problems. Thermal management has become one of the bottlenecks in device packaging. Traditionally, metal aluminum or copper materials with high thermal conductivity are used to make heat dissipation substrates (or heat sinks), but the thermal expansion coefficient of metals is much larger than that of ceramic substrates and semiconductor materials. When the temperature changes, the thermal stress due to thermal mismatch is very large. It is easy to cause warping of ceramics or chips, and in severe cases, failure problems such as cracks, delamination or even fra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L23/373H01L23/14
CPCH01L21/4871H01L23/14H01L23/3735
Inventor 徐玲周盛锐杨颖琳史传进
Owner FUDAN UNIV
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