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Composite substrate and preparation method thereof, semiconductor device and electronic equipment

A composite substrate and composite structure technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of high cost of SiC and high cost of AlxGayN-based semiconductor devices

Pending Publication Date: 2021-11-16
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present application provides a composite substrate and its preparation method, semiconductor device, and electronic equipment, which are used to solve the problem of high cost of AlxGayN-based semiconductor devices due to the high cost of SiC

Method used

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  • Composite substrate and preparation method thereof, semiconductor device and electronic equipment
  • Composite substrate and preparation method thereof, semiconductor device and electronic equipment
  • Composite substrate and preparation method thereof, semiconductor device and electronic equipment

Examples

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preparation example Construction

[0070] Provides a method of preparing a composite substrate, first epitaxially growing the GaN single crystal layer on sapphire substrate, and then bonds to the GaN single crystal layer with the carrier substrate in which the stress compensation layer is formed, and then peel the sapphire substrate, Prepare Figure 4 The composite substrate shown. like Figure 4 As shown, the composite substrate includes a carrier substrate, a bonding dielectric layer and a GaN single crystal layer located on the carrier substrate, and a stress compensation layer in the back of the substrate.

[0071] Figure 4 The composite substrate shown, although there is an advantage of the GaN substrate, it grows in the sapphire substrate, still facing problems with high technical complexity, thickness thickness, low yield rate, etc., resulting in difficult, cost high. Moreover, the stress compensation layer is a thin film dielectric layer, and the stability is poor during subsequent processing, and the stress...

example 1

[0075] like Figure 5A As shown, the present application provides a method of preparing a composite substrate, including:

[0076] S10, such as Figure 5b As shown, hydrogen ion injection is performed to the silicon carbide single crystal ingot 10 from the back surface A1 of the silicon carbide single crystal ingot 10 such that the injection ion reaches the preset depth X, and the defect layer 20 is formed at the preset depth, the defect layer 20 The silicon carbide layer 11 is formed on one side of the silicon carbide single crystal ingot 10 back surface A1.

[0077] That is, the silicon carbide single crystal ingot 10 is located on the side of the defect layer 20 toward the side of the silicon carbide single crystal ingot 10 as the silicon carbide layer 11.

[0078] In some embodiments, the lattage direction of the silicon carbide single crystal ingot 10 is deflected in the of the lattice direction in a section greater than or equal to 0 ° and less than or equal to 8 °.

[0079] ...

example 2

[0168] Example II and examples are in that the silicon carbide layer 11 and the carrier layer 30 are bonded through the transition layer 42.

[0169] The present application example also provides a method of preparing a composite substrate, such as Figure 7A As shown, including:

[0170] S100, such as Figure 7b As shown, hydrogen ion injection is performed to the silicon carbide single crystal ingot 10 from the back surface A1 of the silicon carbide single crystal ingot 10 such that the injection ion reaches the preset depth X, and the defect layer 20 is formed at the preset depth, the defect layer 20 The silicon carbide layer 11 is formed on one side of the silicon carbide single crystal ingot 10 back surface A1.

[0171] That is, the silicon carbide single crystal ingot 10 is located on the side of the defect layer 20 toward the side of the silicon carbide single crystal ingot 10 as the silicon carbide layer 11.

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Abstract

The embodiment of the invention provides a composite substrate and a preparation method thereof, a semiconductor device and electronic equipment, relates to the technical field of semiconductors, and is used for solving the problem of high cost of an AlxGayN-based semiconductor device due to high cost of SiC. The composite substrate comprises a bearing layer, a silicon carbide layer and at least one epitaxial layer, wherein the silicon carbide layer is arranged on the bearing layer and is bonded with the bearing layer; and the material of the silicon carbide layer comprises monocrystalline silicon carbide. At least one epitaxial layer is arranged on one side of the silicon carbide layer away from the bearing layer.

Description

Technical field [0001] The present application relates to semiconductor technology, and more particularly relates to a composite substrate, its preparation method, semiconductor device, electronic equipment. Background technique [0002] Since aluminum gallium nitride (AlxGayN, x ≧ 0, y ≧ 0) material having a wide band gap, high saturated electron velocity, higher critical breakdown field strength superior physical properties, and therefore, AlxGayN materials commonly used in the production of high-voltage, high-frequency devices . Based on this, AlxGayN based semiconductor device with superior switching speed, on-resistance and other characteristics, have a wide range of uses in the fields of aerospace, wireless communication, a photoelectric conversion, charging adapter or the like. But no natural intrinsic AlxGayN crystal material, have to use the method of obtaining heteroepitaxial so AlxGayN heteroepitaxial technology has become one of the key technical limitations AlxGayN b...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02378H01L21/02433H01L21/02694H01L21/02538H01L21/02002H01L21/185H01L21/2007H01L29/7786H01L29/2003H01L29/04H01L29/1608
Inventor 高博黄伯宁万玉喜
Owner HUAWEI TECH CO LTD
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