Semiconductor device and manufacturing method thereof, and electronic device

A manufacturing method and semiconductor technology, which are applied to semiconductor devices, electric solid-state devices, radiation control devices, etc., can solve the problems of corrosion, device damage, yield rate, etc., and achieve the effect of reducing cost and improving yield rate.

Inactive Publication Date: 2017-04-19
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after cutting, the conductive material in the circuit layer of the device wafer is exposed, and the conductive material in the circuit layer will be corroded by the acid solution during subsequent wet etching, resulting in device damage or a decrease in yield.

Method used

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  • Semiconductor device and manufacturing method thereof, and electronic device
  • Semiconductor device and manufacturing method thereof, and electronic device
  • Semiconductor device and manufacturing method thereof, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The following will refer tofigure 1 as well as Figure 2A ~ Figure 2H A method for fabricating a semiconductor device according to an embodiment of the present invention will be described in detail.

[0036] First, step 101 is performed to form a device wafer, the device wafer includes a device layer formed with semiconductor elements, a circuit layer located on the surface of the device layer, and a passivation layer located on the surface of the circuit layer.

[0037] Such as Figure 2A As shown, a device wafer 200 is formed. The device wafer 200 is a wafer that needs to be thinned, including a device layer 201 formed with semiconductor elements, a circuit layer 202 on the surface of the device, and a passivation layer 203 on the surface of the circuit layer.

[0038] In this embodiment, the device layer 201 is used as a light-transmitting substrate, which may be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III ...

Embodiment 2

[0070] The present invention also provides a semiconductor device manufactured by the method described in Embodiment 1, such as image 3 As shown, it includes: a device wafer 300, the device wafer 300 includes a device layer 301 formed with semiconductor elements, a circuit layer 302 located below the device, and a passivation layer 303 located below the circuit layer; Operating the wafer 100, the device wafer 300 is bonded to the device wafer 100 through the passivation layer 303, and the surface of the device wafer 300 that is not bonded to the operating wafer 100 is the back side ; and a protective layer 304 covering the sidewall of the circuit layer 302 .

[0071] The device layer 301 is used as a light-transmitting substrate, which may be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, It also includes multi-layer structures composed of these semiconductors, or silicon-on-insulator (SOI), si...

Embodiment 3

[0078] The present invention further provides an electronic device including the aforementioned semiconductor device.

[0079] The electronic device also has the above-mentioned advantages due to the higher performance of the included semiconductor devices.

[0080] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned semiconductor device, for example: a mobile phone motherboard with the integrated circuit, etc.

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PUM

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Abstract

The invention provides a semiconductor device and a manufacturing method thereof, and an electronic device. The manufacturing method comprises steps that a device wafer is formed, the device wafer comprises a device layer provided with a semiconductor element, a circuit layer arranged at a surface of the device layer, and a passivation layer arranged on the surface of the circuit layer, and the device wafer comprises a center region and a peripheral region surrounding the center region; an operation wafer is provided, the operation wafer is made to bond with the device wafer through the passivation layer, and a surface of the device wafer which is not bonded with the operation wafer is a back surface; the device wafer is trimmed so as to remove the peripheral region of the device wafer; a protection layer for covering a side wall of the circuit layer is formed; the back surface of the device wafer is thinned through the thinning process. Through the manufacturing method, the protection layer for covering the side wall of the circuit layer is formed, the wafer is prevented from being damaged by wet etching in a subsequent thinning process, and a yield rate is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an image sensor chip, a manufacturing method thereof, and an electronic device. Background technique [0002] The back-illuminated (BSI) image sensor can reduce / avoid the absorption and reflection of light by the circuit layer or oxide layer, so it has high sensitivity and signal-to-noise ratio. In order to improve photon capture efficiency, many high-performance CMOS image sensors are now back-illuminated (BSI) image sensors. [0003] Many special processes are required in the formation of BSI image sensors. For example, after the device wafer is manufactured, it needs to be bonded to the handle wafer, and then the device wafer is thinned by grinding, wet etching, etc. to improve light. collection capability, while the handle wafer provides mechanical support for the thin device wafer during and after thinning. However, during the grinding process, the edge of the devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/14685
Inventor 袁俊何昭文
Owner SEMICON MFG INT (SHANGHAI) CORP
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