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Target material for sputtering and manufacturing method thereof

A manufacturing method and sputtering target technology, applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problem of particle generation

Active Publication Date: 2018-11-09
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when sputtering is performed using this target, particles (sputtered particles) flying out from the eroded portion adhere to the non-eroded portion, and an arc is generated when the adhered sputtered particles are peeled off, and this may result in particle generation.

Method used

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  • Target material for sputtering and manufacturing method thereof
  • Target material for sputtering and manufacturing method thereof
  • Target material for sputtering and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0114] a) Preparation of sputtering target

[0115] [processing process]

[0116] In order to prepare split targets 13a to 13f, prepare six cylindrical ITO (indium oxide containing tin) sintered bodies with an outer diameter of 155 mm, an inner diameter of 131 mm, and a total length (length in the axial direction) of 165 mm, and sinter each The body was processed as follows.

[0117] First, the above-mentioned cylindrical ITO sintered body was set on a surface grinder, and its two end faces were ground twice using a grindstone with a particle size of 120#, so that the total length reached 161 mm. Then, in order to make the outer diameter reach 151mm, set the cylindrical ITO sintered body on a cylindrical grinder, and use a grinding stone with a particle size of 120# to implement two cuts into its outer peripheral surface (sputtering surface) with an amount of Φ0.1mm / second, the grinding time of each part is 18 seconds for coarse grinding, and the processing is until 151.4mm...

Embodiment 2

[0129] Except that the outer peripheral surface of the cylindrical ITO sintered body uses a grindstone with a particle size of 100# to implement rough grinding for 4 times, uses a grindstone with a particle size of 140# to implement fine grinding for 4 times, and implements clear grinding for 6 times, the same as in Example 1 By doing so, divided targets 13a to 13f were obtained, and furthermore, cylindrical sputtering target 11 was produced. In the same manner as in Example 1, the surface roughness of the sputtering surface 15 of the divided targets 13a to 13f was measured, and the division interval was measured. Further, sputtering was performed using the cylindrical sputtering target 11, thereby forming a cylindrical surface. The divided target materials 13a-13f of the target material 13 were evaluated.

Embodiment 3

[0131] Except that the outer peripheral surface of the cylindrical ITO sintered body uses a grindstone with a particle size of 170# to implement rough grinding for 2 times, uses a grindstone with a particle size of 400# to implement 1 fine grinding, and implements 2 times of clear grinding, the same as in Example 1 By doing so, the segmented targets 13a to 13f and the cylindrical sputtering target 11 were obtained. The same measurement and evaluation as in Example 1 were performed on these split targets and cylindrical sputtering targets.

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Abstract

The present invention provides a sputtering target with very little generation of arcs and nodules and a manufacturing method thereof. A flat or cylindrical target (3, 13) is obtained by processing a material composed of an oxide sintered body. At this time, use a grinding stone with a specified particle size, and implement more than one rough grinding on the surface that becomes the sputtering surface (5, 15) in the material according to the particle size of the grinding stone, and then perform more than one cleaning grinding, Therefore, the surface roughness of the sputtering surface (5, 15) is controlled to be 0.9 μm or more in terms of arithmetic average roughness Ra, 10.0 μm or less in terms of maximum height Rz, and 7.0 μm in terms of ten-point average roughness RzJIS the following. The obtained target (3, 13) is bonded to the supporting body (2, 12) through the bonding layer (4, 14) to form a sputtering target (1, 11).

Description

technical field [0001] The present invention relates to a sputtering target and a method for producing the same. Further, the present invention relates to a sputtering target using the sputtering target, and particularly relates to a joint sputtering method using the sputtering target as a divided target. Targets and methods of making them. Background technique [0002] In general, transparent conductive films have high conductivity and high transmittance in the visible light region. Therefore, it has been used as a transparent electrode of solar cells, liquid crystal display elements, and other light-receiving elements. In addition, it is also used as a transparent heating element for anti-fogging in automobile windows, heat-reflecting films for buildings, anti-static films, and refrigerated showcases. [0003] In these applications, tin oxide containing antimony and fluorine as dopants, zinc oxide containing aluminum and gallium as dopants, or indium oxide (Indium Oxide,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C04B41/80C04B35/01C04B37/02
CPCC04B41/80C23C14/34C04B37/023C23C14/3414H01J37/3429C04B2237/12C04B2237/34C04B2237/402C04B2237/403C04B2237/406C04B2237/407C04B2237/52C04B37/021H01J37/3423H01J37/3426H01J37/3491C04B35/457C04B35/64C04B41/91C04B2235/9646C04B2235/3286C04B2235/3293C23C14/3407
Inventor 小泽诚安东勋雄
Owner MITSUI MINING & SMELTING CO LTD