Manufacturing method of semiconductor light emitting device
A manufacturing method and technology for a light-emitting device, which are applied to semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problems of low hydrogen sulfide gas barrier, high gas permeability, and reduced brightness of semiconductor light-emitting elements.
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Embodiment 1
[0119] As the silicone resin, resin 1 having an organopolysiloxane structure represented by the above formula (1) (weight average molecular weight = 3500, in the formula (1), R 1 = Methyl, R 2 = methoxy or hydroxyl). Table 1 shows the abundance ratio of each repeating unit of resin 1. Resin 1 is a silicone resin substantially containing only silicon atoms bonded to three oxygen atoms.
[0120] [Table 1]
[0121] Resin 1
[0122]
[0123] Measure the 1000~1050cm of resin 1 -1 The peak position of the infrared absorption spectrum from the Si-O-Si bond, the result is 1016.3cm -1 . The infrared absorption spectrum was measured under the following conditions.
[0124]
[0125] Device name: VARIAN Co., Ltd. 670
[0126] Accessories: GOLDEN GATE diamond ATR
[0127] Measurement wavelength: 4000~700cm -1
[0128] Resolution: 4cm -1
[0129] Background Measurements: Atmosphere
[0130] Cumulative times: 32 times
[0131] Put 354 g of the above-mentioned resin 1 and ...
Embodiment 2
[0146] Except having used the following resin 3 as a silicone resin instead of resin 1, it carried out similarly to Example 1, and manufactured the member for optical semiconductor sealing.
[0147] Resin 3 has an organopolysiloxane structure represented by the above formula (1) (weight average molecular weight=3000, in the formula (1), R 1 = Methyl, R 2 = hydroxyl or ethoxy). Table 3 shows the abundance ratio of each repeating unit of resin 3. Me in the table is a methyl group, R is a hydrogen atom or an ethyl group, and the ratio of the hydrogen atom to the ethyl group is 96:4.
[0148] Resin 3 is a silicone resin substantially containing only silicon atoms bonded to three oxygen atoms.
[0149] [table 3]
[0150] Resin 3
[0151]
[0152] Measure the 1000~1050cm of the resin 3 -1 The peak position of the infrared absorption spectrum from the Si-O-Si bond, the result is 1018.2cm -1 . In addition, the thickness of 950 to 1050 cm of the optical semiconductor sealing m...
Embodiment 3
[0154] A semiconductor sealing member was produced in the same manner as in Example 1, except that a mass ratio mixture of resin 1 and the following resin D1 of 70:30 was used as the silicone resin.
[0155] Resin D1 has an organopolysiloxane structure represented by the following formula (4) (weight average molecular weight = 2100), which corresponds to R in the formula (2) 1 = Methyl, R 2 = Methyl, R 3 = The structure of the hydroxyl group.
[0156] Chemical 5
[0157]
[0158] [wherein, Me is a methyl group, and n is an integer of 1 or more. ]
[0159] Specifically, 70 g of resin 1 and 32 g of isopropanol were put into a flask with a reflux device installed in a water bath, and stirred while refluxing the isopropanol at a liquid temperature of 80 to 85° C. Allow the resin to fully dissolve. Then, 30 g of the above-mentioned resin D1 was thrown into the solution in which the above-mentioned resin was dissolved, and stirred for 1 hour or more to dissolve it.
[0160...
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