Preparation method of cerium dioxide polishing powder liquid

A technology of cerium dioxide and polishing liquid, which is applied in chemical instruments and methods, polishing compositions containing abrasives, and other chemical processes, can solve problems such as short time, reduced grinding efficiency, and poor stability, and is not easy to achieve Sedimentation, effect of long suspension time

Inactive Publication Date: 2017-04-26
HAICHENG HAIMEI POLISHING MATERIAL MFG
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In addition, especially in the process of semiconductor manufacturing, the abrasive slurry formed by ceria powder in aqueous solution is prone to agglomeration, agglomerates into larger particles and settles rapidly, resulting in the reduction of effective abrasives in the abrasive slurry, which is concentrated in The time for the grinding rubber to float in the aqueous solution is short and the stability is not good, thus reducing the grinding efficiency, and the instability between grinding batches is very obvious

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of cerium dioxide polishing powder liquid
  • Preparation method of cerium dioxide polishing powder liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Add 2g of cerium oxide powder and 0.8g of N-3-trimethoxysilylpropyl ethylenediamine into 100ml of ethanol solution containing 99% by volume, and mix the mixture, and place the mixture in an ultrasonic bath for 10 minutes of ultrasound, then in 70 Stir in a water bath at ℃ for 120 min, then dehydrated and filtered, washed with sewage ethanol three times, and dried in an oven at 80 ℃ to obtain a powder sample.

Embodiment 2

[0023] Add 2g of cerium oxide powder and 1.0g of N-3-trimethoxysilylpropyl ethylenediamine to 100ml of ethanol solution containing 95% by volume and mix, and place the mixed solution in an ultrasonic bath for 10 minutes, and then in 70 Stir in a water bath at ℃ for 120 min, then dehydrated and filtered, washed with sewage ethanol three times, and dried in an oven at 80 ℃ to obtain a powder sample.

Embodiment 3

[0025] Add 2g of cerium oxide powder and 2g of N-3-trimethoxysilylpropyl ethylenediamine to 100ml of ethanol solution containing 50% by volume and mix, and place the mixed solution in an ultrasonic bath for 10 minutes, then at 70°C Stir in a water bath for 120 minutes, then dehydrated and filtered, washed with sewage ethanol three times, and dried in an oven at 80°C to obtain a powder sample.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a preparation method of a cerium dioxide polishing powder liquid. The preparation method comprises the steps: adding cerium dioxide powder into a mixed solution of a silane coupling agent compound and an organic solution, wherein the silane coupling agent compound contains alkoxyl at one end and a polar functional group at the other end, and an organic solvent in the organic solution is an alcohol; and dehydrating and drying the mixed solution to obtain polishing powder and then dissolving the polishing powder in an aqueous solution to obtain the polishing liquid. The cerium dioxide powder generated by the method provided by the invention can be stably and uniformly dispersed in the aqueous solution, is relatively long in suspending time, is unlikely to generate precipitates, can be applied to manufacturing various cerium dioxide related polishing powder slurry and liquid slurry, and has certain industrial application value.

Description

Technical field [0001] The invention relates to the field of rare earth abrasive materials. Used for polishing optical glass and polishing semiconductor wafers. In particular, it relates to a preparation method of cerium oxide polishing powder liquid. Background technique [0002] Cerium-based abrasives are widely used as abrasives for glass materials. Especially in recent years, the fields of electrical and electronic equipment such as cell phone glass, liquid crystal display (LCD), and photomasks have grown rapidly, and the demand for abrasive materials for their glass substrates has increased. With the continuous development of industry manufacturing technology, the grinding of substrates and other glass requires higher grinding speed and better surface accuracy. At the same time, abrasive materials are required to have high recycling performance. [0003] In addition, especially in the semiconductor manufacturing process, the grinding slurry formed by ceria powder in the aq...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14
CPCC09G1/02C09K3/1463
Inventor 刘义
Owner HAICHENG HAIMEI POLISHING MATERIAL MFG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap