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Alloy quantum dot core with uniform internal and external components and preparation method thereof

A technology of quantum dots and alloys, applied in the field of quantum dots, can solve the problems of low luminous efficiency, poor repeatability, uneven composition inside and outside the core of alloy quantum dots, etc., and achieve the effect of high repeatability

Active Publication Date: 2017-04-26
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide an alloy quantum dot core with uniform internal and external components and a preparation method thereof, aiming to solve the problem of the poor repeatability of the existing alloy quantum dot core preparation method and the resulting alloy quantum dot core Inhomogeneous components inside and outside the point core lead to low luminous efficiency, unstable wavelength and fluorescence intensity

Method used

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  • Alloy quantum dot core with uniform internal and external components and preparation method thereof
  • Alloy quantum dot core with uniform internal and external components and preparation method thereof
  • Alloy quantum dot core with uniform internal and external components and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] To obtain Cd with uniform internal and external components x Zn 1-x S alloy quantum dot core as an example

[0052] 1. Cadmium Oleate Cd(OA) 2 Preparation of precursors:

[0053] Add 0.2 mmol of cadmium oxide (CdO), 0.5 ml of oleic acid (OA) and 5 ml of octadecene (ODE) into a three-necked flask. First vacuumize at room temperature for 30 mins, then heat to 180°C and exhaust argon for 60 mins, and then maintain Vacuum at 180°C for 30 mins, and cool to room temperature for later use.

[0054] 2. Preparation of zinc oleate Zn(OA)2 precursor:

[0055] Add zinc acetate Zn(Ac) into the three-necked flask 2 1.8 mmol, 1 ml of oleic acid (OA) and 5 ml of octadecene (ODE) were first vacuumed at room temperature for 30 mins, then heated to 180°C to exhaust argon for 60 mins, then vacuumed at 180°C for 30 mins, cooled to room temperature for later use.

[0056] 3. Preparation of sulfur (S) precursor:

[0057] Add 13 mg of S to 1 ml of octadecene (ODE), heat at 230 °C for 2...

Embodiment 2

[0061] To obtain Cd with uniform internal and external components x Zn 1-x Se alloy quantum dot core as an example

[0062] 1. Cadmium Oleate Cd(OA) 2 Preparation of precursors:

[0063] Add 0.2 mmol of cadmium oxide (CdO), 0.5 ml of oleic acid (OA) and 5 ml of octadecene (ODE) into a three-necked flask. First vacuumize at room temperature for 30 mins, then heat to 180°C and exhaust argon for 60 mins, and then maintain Vacuum at 180°C for 30 mins, and cool to room temperature for later use.

[0064] 2. Preparation of zinc oleate Zn(OA)2 precursor:

[0065] Add zinc acetate Zn(Ac) into the three-necked flask 2 1.8 mmol, 1 ml of oleic acid (OA), and 5 ml of octadecene (ODE) were first vacuumed at room temperature for 30 mins, then heated to 180°C and exhausted with argon for 60 mins, then vacuumed at 180°C for 30 mins, cooled to room temperature for later use.

[0066] 3. Preparation of Selenium (Se) Precursor:

[0067] Weighing 25 mg of Se was added to 1 ml of octadecen...

Embodiment 3

[0071] To obtain Cd with uniform internal and external components x Zn 1-x S y Se 1-y Alloy quantum dot core as an example

[0072] 1. Cadmium Oleate Cd(OA) 2 Preparation of precursors:

[0073] Add 0.2 mmol of cadmium oxide (CdO), 0.5 ml of oleic acid (OA) and 5 ml of octadecene (ODE) into a three-necked flask. First vacuumize at room temperature for 30 mins, then heat to 180°C and exhaust argon for 60 mins, and then maintain Vacuum at 180°C for 30 mins, and cool to room temperature for later use.

[0074] 2. Preparation of zinc oleate Zn(OA)2 precursor:

[0075] Add zinc acetate Zn(Ac) into the three-necked flask 2 3.6 mmol, 1 ml of oleic acid (OA) and 5 ml of octadecene (ODE) were first vacuumed at room temperature for 30 mins, then heated to 180°C and exhausted with argon for 60 mins, then vacuumed at 180°C for 30 mins, cooled to room temperature for later use.

[0076] 3. Preparation of sulfur (S) precursor 1:

[0077] Add 20 mg of S to 1 ml of octadecene (ODE) ...

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Abstract

The invention discloses an alloy quantum dot core with uniform internal and external components and a preparation method thereof, wherein the method comprises the steps: stirring and mixing evenly at least two pre-prepared cationic precursor solutions, heating to a predetermined temperature, injecting at least one prepared anionic precursor solution, carrying out a nucleation reaction, continuing to inject the cationic precursor solutions or the anionic precursor solution or simultaneously inject the cationic precursor solutions and the anionic precursor solution at a gradually changed speed in the nucleation reaction process, making the reaction rate of all the components in the nucleation reaction process remained relatively stable and making the nucleation stoichiometric ratio relatively consistent, and thus obtaining the alloy quantum dot core with uniform internal and external components. By the method, the problems that an alloy quantum dot core has non-uniform internal and external components, low luminous efficiency and unstable wavelength and fluorescence intensity can be effectively solved, and the method provided by the invention has the advantages of simple operation, easy control, high repeatability and the like.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to an alloy quantum dot core with uniform internal and external components and a preparation method thereof. Background technique [0002] In quantum dot light-emitting diodes, obtaining high device efficiency and long life has always been the two goals pursued by researchers. However, in terms of improving device efficiency, the fluorescence intensity of quantum dots is an important factor restricting device efficiency. For quantum dots with higher quantum yield, there are corresponding requirements for the structure of electroluminescent quantum dots in order to obtain better device efficiency and longer lifetime. [0003] Alloy quantum dots have attracted much attention due to their advantages such as adjustable band gap, high fluorescence intensity, and good stability. When preparing alloy quantum dots with corresponding light-emitting bands, the preparation of high-quality...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/56C09K11/88C01G11/02B82Y20/00B82Y40/00H01L33/50
CPCB82Y20/00B82Y40/00C01G11/02C01P2004/64C09K11/565C09K11/883H01L33/502H01L2933/0041
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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