Infrared detector with microbridge structure and production method thereof

An infrared detector and micro-bridge structure technology, applied in the field of infrared detectors, can solve the problems of complex surface structure of the infrared absorption layer, failure of the thermal insulation of the micro-bridge, and reduced yield, etc., so as to avoid the contact between the suspended part and the micro-bridge structure, The effect of reducing difficulty, improving performance and yield

Active Publication Date: 2017-05-10
ZHEJIANG DALI TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of the infrared detector with double sacrificial layers, the surface structure of the uppermost infrared absorbing layer is complicated due to the structure of two layers of through holes. After the sacrificial layer is released, it is easy to

Method used

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  • Infrared detector with microbridge structure and production method thereof
  • Infrared detector with microbridge structure and production method thereof
  • Infrared detector with microbridge structure and production method thereof

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[0026] The specific implementation of the infrared detector with the microbridge structure and the manufacturing method thereof provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0027] Please refer to figure 1 , Is a process flow of a method for manufacturing an infrared detector with a microbridge structure in a specific embodiment of the present invention.

[0028] The manufacturing method of the infrared detector includes:

[0029] Step S101: Provide a substrate with a metal interconnection layer formed on the surface of the substrate.

[0030] Step S102: forming a first sacrificial layer on the surface of the substrate, the first sacrificial layer having a first through hole located on the surface of the metal interconnection layer.

[0031] Step S103: A patterned micro-bridge structure is formed on the inner wall surface of the first through hole and the surface of the first sacrificial layer. The micro-bridge structu...

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Abstract

The invention provides an infrared detector with microbridge structures and a production method thereof. The infrared detector comprises a base, wherein metal interconnection layers are formed in the surface of the base; the graphical microbridge structures which are partially suspended above the base, wherein the microbridge structures comprises bridge legs and bridge beams, the support beams are electrically connected with the metal interconnection layers, and the bridge beams are suspended and tilt upwards; and graphical infrared sensitive layers which are partially suspended above the microbridge structures, wherein the infrared sensitive layers are electrically connected with the bridge beams of the microbridge structures and are supported by the bridge beams. The yield of the infrared detector is improved and the relatively high performance is achieved.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to an infrared detector with a micro-bridge structure and a manufacturing method thereof. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) is a technology used to realize tiny integrated devices or systems. It is manufactured using integrated circuit or MEMS proprietary batch processes, with device or system dimensions ranging from a few microns to a few millimeters. These devices (or systems) are capable of sensing, controlling, and actuating microscale structures and producing effects at the macroscale. In the past ten years, MEMS products have been widely used in all aspects of people's daily life, including accelerometers of automobile airbags, pressure sensors, micro-microphones on smart electronic products, gyroscopes, inkjet print heads and uncooled infrared detectors Wait. MEMS products generally include two parts: IC processing circuit and...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81C1/00G01J5/10
CPCB81B7/02B81B2201/0278B81C1/00142B81C2201/01G01J5/10
Inventor 池积光金杰姜利军
Owner ZHEJIANG DALI TECH
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