Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Crystal growing furnace capable of realizing continuous production

A crystal growth furnace and crystal growth technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of increasing labor costs, reducing crystal efficiency, and long crystal synthesis time, so as to save cost and time, improve Synthetic efficiency and the effect of reducing process links

Inactive Publication Date: 2017-05-10
珠海鼎泰芯源晶体有限公司
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, there are still some problems, such as: the crystal synthesis time is long, and the crucible must be manually put into or removed from the crystal furnace, which increases labor costs and reduces the efficiency of crystal production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystal growing furnace capable of realizing continuous production
  • Crystal growing furnace capable of realizing continuous production
  • Crystal growing furnace capable of realizing continuous production

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Embodiments of the present invention will be described below with reference to the accompanying drawings. Those skilled in the art would recognize that the described embodiments can be modified in various ways or combinations thereof without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative in nature and not intended to limit the scope of the claims. Also, in this specification, the drawings are not drawn to scale, and like reference numerals denote like parts.

[0023] Combine below Figure 1-3 This embodiment will be described in detail. figure 1 Schematic diagram of the crystal growth of the present invention, figure 2 It is a schematic diagram of the crystal structure of the present invention during transportation.

[0024] The invention includes: a horizontal moving mechanism, a furnace body, a vertical lifting mechanism, and a crucible assembly. A plurality of crucible assemblies are sequentially ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a crystal growing furnace capable of realizing continuous production. The crystal growing furnace capable of realizing continuous production comprises a horizontal moving mechanism, a furnace body, a vertical lifting mechanism and crucible assemblies, wherein the plurality of crucible assemblies are moved into the furnace body sequentially through the horizontal moving mechanism and the vertical lifting mechanism to realize on-line continuous production. The crystal growing furnace capable of realizing continuous production adopts a VGF growing method to continuously produce single crystals, improves the synthesis efficiency, reduces the process link and can grow other III-V group compound single crystals.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a crystal growth furnace capable of realizing continuous production. Background technique [0002] InP is a group III-V compound that was developed earlier. With the rapid development of optical fiber communication, high-speed electronic devices, high-efficiency solar cells and laser diodes. A series of superior characteristics of the InP crystal series have been brought into play, which has attracted more and more people's attention and attention. [0003] At present, the growth method of InP is mostly applied by the VGF method. The vertical gradient solidification (VGF) method is one of the main process technologies for growing low-dislocation, high-quality compound single crystals. The compound single crystal is grown by the VGF method, and a heater with a multi-stage heating structure can be used to accurately establish a temperature gradient in t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/40
CPCC30B11/001C30B29/40
Inventor 杨翠柏方聪杨光辉陈丙振
Owner 珠海鼎泰芯源晶体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com