Ball milling electric field pressure-assisted sintering remanufacturing method and device of titanium chips
An electric field pressure-assisted and remanufacturing technology, which is applied in the field of metal material processing, can solve the problems of weakening the mechanical properties of materials and not solving them well, achieve good isotropy, realize oxide dispersion, and suppress the formation of metallurgical defects. Effect
Inactive Publication Date: 2017-05-24
SHANGHAI DIANJI UNIV
View PDF6 Cites 7 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, Ti is an active metal that is easy to oxidize. The oxide on the chip surface exists in the form of TiO2, and its texture is tough. If the Ti chip is directly processed by FAPAS technology, the oxide in the remanufactured Ti material cannot be broken and dispersed, and the oxide is continuous. distribution will form metallurgical defects in the microstructure, weakening the mechanical properties of the material
This technical problem has not yet been well resolved
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further elaborated below in conjunction with illustrations and specific embodiments.
[0024] Such as figure 1 As shown, the ball milling electric field pressure assisted sintering remanufacturing method of a kind of titanium chip that the present invention proposes comprises the following steps:
[0025] Step (1)-Ti chip recovery pretreatment: use the chips generated by end milling Ti 2 (ASTM Grade 2) as raw materials, collect the chips, and use Inductively coupled plasma atomic emission spectroscopy (ICP- AES) analysis of its chemical composition (mass percentage, wt.%), the analysis results are as follows: initial Ti cutting (mass percentage, wt.%) O=0.15, N<0.01, C<0.01, Fe=0.10; As can be seen from the analysis results , the chemical composition (oxygen content) of the grade 2 Ti chips processed by milling m...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
| Property | Measurement | Unit |
|---|---|---|
| yield strength | aaaaa | aaaaa |
Login to view more
Abstract
The invention provides a ball milling electric field pressure-assisted sintering remanufacturing method and device of titanium chips. The ball milling electric field pressure-assisted sintering remanufacturing method comprises the steps of step (1), recycling and pretreatment of Ti chips; step (2) BM (ball milling) processing of Ti chips; and step (3) FAPAS (field-activated and pressure-assisted sintering) curing of BM-Ti chips. According to the ball milling electric field pressure-assisted sintering remanufacturing method, the BM technology and the FAPAS technology are combined, remanufacturing of waste chips is successfully implemented from second-grade Ti (ASTM Grade 2) chips, and a large-size blocky Ti material is prepared; through the BM-FAPAS remanufacturing technology, an ultrafine structure is prepared, oxide dispersion is achieved, and metallurgical defects are inhibited; the strength of the remanufactured Ti material is superior to that of a second-grade Ti commercial bar material on the similar oxygen content level, and the remanufactured Ti material has good isotropy; and the BM-FAPAS remanufacturing technology avoids high-temperature melting, is a low-cost, efficient and clean metal resource recycling treatment technology, and is particularly applicable to circulation and reutilization of high-smelting cost Ti resource.
Description
technical field [0001] The invention belongs to the field of metal material processing, and relates to solid-phase recycling and reuse of waste metal resources, especially for titanium resources with high smelting costs, and develops a new technology for remanufacturing highly efficient and clean titanium chips, especially relates to a waste Ball milling-electric field-pressure assisted sintering remanufacturing method of titanium chips. Background technique [0002] Field-activated and pressure-assisted sintering (FAPAS for short) is a new type of sintering technology developed in recent years. It utilizes the Joule heat generated by the pulsed electric field and applies pressure to achieve sintering and dense integration at instantaneous high temperature. FAPAS technology has the characteristics of uniform heating, fast heating speed, short sintering time and high production efficiency. The microscopic grains of its products are fine and uniform, which can effectively pre...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more Patent Type & Authority Applications(China)
IPC IPC(8): B22F8/00B22F3/14G01N21/73
CPCB22F3/14B22F8/00G01N21/73Y02W30/50
Inventor 罗蓬
Owner SHANGHAI DIANJI UNIV
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap