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Pressure sensor and preparation method thereof

A pressure sensor and pressure technology, applied in piezoelectric devices/electrostrictive devices, fluid pressure measurement using capacitance changes, piezoelectric/electrostrictive/magnetostrictive devices, etc. Good and other problems, to avoid external air pressure response, improve performance, and avoid structural differences

Inactive Publication Date: 2017-05-24
SHANGHAI LEXVU OPTO MICROELECTRONICS TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a pressure sensor and its preparation method to solve the problem of poor electrical characteristics of the pressure-sensing layer in the prior art

Method used

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  • Pressure sensor and preparation method thereof
  • Pressure sensor and preparation method thereof
  • Pressure sensor and preparation method thereof

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Embodiment Construction

[0030] In the pressure sensor in the prior art, the capacitive pressure sensor is integrated on the CMOS, and the sensor is integrated through the surface process after the CMOS is fabricated. The capacitive pressure sensor is based on the Wheatstone bridge principle and consists of two parts: a reference capacitor and a sensing capacitor. The sensing capacitor has one more window than the reference capacitor to sense the external air pressure. As the air pressure changes, the sensing capacitor realizes the capacitance change through the change of the distance between the upper and lower plates, while the reference capacitor does not change with the air pressure. Finally, the air pressure output is realized by comparing the sensing capacitance with the reference capacitance, and the use of the reference capacitance effectively improves the air pressure measurement accuracy. However, since the sensing window is less than the sensing capacitor, this structural difference affects...

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Abstract

The invention discloses a pressure sensor and a preparation method thereof. The pressure sensor comprises reference capacitors and induction capacitors, wherein the reference capacitors and the induction capacitors are in array distribution on a semiconductor substrate; at the position of each reference capacitor, a pressure induction layer comprises a top wall, a bottom wall, a side wall and a plug structure, wherein the top wall, the bottom wall, the side wall and the semiconductor substrate form a hollow cavity in a surrounding manner, the top wall of the hollow cavity is opposite to a bottom contact electrode, and the plug structure is located in the hollow cavity, and supported between the semiconductor substrate and the top wall of the pressure induction layer; and the top wall of the pressure induction layer of each of the reference capacitors and the induction capacitors includes a protective layer with an annular groove. Compared with the prior art, a new reference capacitor structure not only avoids the structure difference of the reference capacitors and the induction capacitors in induction windows, but also avoids the response of the reference capacitors to the ambient air pressure by making the support structures below the induction windows of the reference capacitors, thereby further improving the device performance.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems, in particular to a pressure sensor and a preparation method thereof. Background technique [0002] Microelectromechanical systems (MEMS for short) is a multi-disciplinary frontier research field developed on the basis of microelectronics technology. It is a technology that uses semiconductor technology to manufacture microelectromechanical devices. Compared with traditional electromechanical devices, MEMS devices have obvious advantages in high temperature resistance, small size, and low power consumption. After decades of development, it has become one of the world's major scientific and technological fields. It involves electronics, machinery, materials, physics, chemistry, biology, medicine and other disciplines and technologies, and has broad application prospects. [0003] A pressure sensor is a MEMS that converts a pressure signal into an electrical signal. Accordi...

Claims

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Application Information

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IPC IPC(8): B81C1/00B81B3/00G01L9/12
CPCB81C1/00182B81B3/0021B81B3/007G01L9/12
Inventor 刘孟彬毛剑宏
Owner SHANGHAI LEXVU OPTO MICROELECTRONICS TECH
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