Low-dielectric loss sensitized photosensitive glass and production method

A technology of photosensitive glass and production method, which is applied in the field of photosensitive glass production, and can solve problems such as large dielectric constant of glass, difficulty in meeting applications, poor stability of dielectric loss, etc.

Inactive Publication Date: 2017-05-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the presence of alkali metal ions in this type of photosensitive glass, which can move in the network (stripes) of the glass body to generate polarization and the vibration of different structures (phases) in the glass at high frequencies, the dielectric constant of the glass becomes larger, Increased loss...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A. Raw materials: Will: SiO with a purity of 99% 2 570.39g Li with a purity of 97% 2 CO 3 208.66g, 99% pure NaNO 3 45.36 g, 99% pure K 2 CO 3 72.79g, 99% pure Al 2 o 3 33.08g of 99% pure ZnO 24.79g of 98% pure BaCO 3 10.75g, 98% pure B 2 o 3 25.06g, 99% pure reducing agent Sb 2 o 3 6.61g, photosensitizer Ce(NO 3 ) 3 ·6H 2 O 0.83 g, nucleating agent AgNO with a purity of 98% 3 1.68g were weighed separately for use;

[0018] B. Initial mix: a. Weigh the SiO to be used 2 , Li 2 CO 3 、NaNO 3 、K 2 CO 3 、Al 2 o 3 , ZnO, BaCO 3 , B 2 o 3 , Sb 2 o 3 , mix evenly, and set aside;

[0019] b. Will weigh the Ce(NO 3 ) 3 ·6H 2 O, AgNO 3 Also mix well and set aside;

[0020] C. Ball milling and mixing: put the two groups of mixtures a and b obtained in step B in a ball milling tank, and after wet milling and mixing for 24 hours, put them into the box and dry until the moisture content is ≤ 3%;

[0021] D. Melting: Send the powder dried in st...

Embodiment 2

[0026] A. Raw materials: Will: SiO with a purity of 99% 2 548.18g Li with a purity of 97% 2 CO 3 223.81g, 99% pure NaNO 3 55.25g, 99% pure K 2 CO 3 88.67g, 99% pure Al 2 o 3 20.19g of 99% pure ZnO 16.12g of 98% pure CaCO 3 14.50 g, 98% pure B 2 o 3 24.40 g of reducing agent Sb with a purity of 99% 2 o 3 6.45g, photosensitizer Ce(NO 3 ) 3 ·6H 2 O 0.80 g, nucleating agent AgNO with a purity of 98% 3 1.63g were weighed separately for use;

[0027] B. Initial mix: a. Weigh the SiO to be used 2 , Li 2 CO 3 、NaNO 3 、K 2 CO 3 、Al 2 o 3 , ZnO, CaCO 3 , B 2 o 3 , Sb 2 o 3 , mix evenly, and set aside;

[0028] b. Will weigh the Ce(NO 3 ) 3 ·6H 2 O, AgNO 3 Also mix well and set aside;

[0029] C. Ball milling and mixing: put the two groups of mixtures a and b obtained in step B in a ball milling tank, wet milling and mixing for 24 hours until uniformly mixed, and then dry in an oven until the moisture content is ≤ 3%;

[0030] D. Melting: Send t...

Embodiment 3

[0033] A. Raw materials: Will: SiO with a purity of 99% 2 536.29 g of Li with a purity of 97% 2 CO 3 205.05g, 99% pure NaNO 3 50.11 g, 99% pure K 2 CO 3 80.46g, 99% pure Al 2 o 3 30.43g of 99% pure ZnO 16.21g of 98% pure BaCO 3 10.53 g, 98% pure CaCO 3 29.26 g, 98% pure B 2 o 3 32.76g, 99% pure reducing agent Sb 2 o 3 6.46g, photosensitizer Ce(NO 3 ) 3 ·6H 2 O 0.80 g, nucleating agent AgNO with a purity of 98% 3 1.64g were weighed separately for use;

[0034] B. Initial mix: a. Weigh the SiO to be used 2 , Li 2 CO 3 、NaNO 3 、K 2 CO 3 、Al 2 o 3 , ZnO, Sb 2 o 3 , B 2 o 3 、BaCO 3 , CaCO 3 Mix well and set aside;

[0035] b. Will weigh the Ce(NO 3 ) 3 ·6H 2 O, AgNO 3 Also mix well and set aside;

[0036] C. Ball milling and mixing: put the two groups of mixed materials obtained in step B from a and b into a ball milling tank, wet mill and mix for 24 hours until uniformly mixed, and then send them into an oven for drying until the moisture...

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PUM

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Abstract

The invention discloses low-dielectric loss sensitized photosensitive glass and a production method belonging to the technical field of glass production. The photosensitive glass is prepared from the following chemical components in percentage by weight: 63-72wt% of SiO2, 6-12wt% of Li2O, 1-5wt% of Na2O, 3-9wt% of K2O, 2-5wt% of Al2O3, 1-4wt% of ZnO, 0.5-0.9wt% of Sb2O3, 0.02-0.06wt% of Ce2O3, 0.09-0.16wt% of Ag2O, 2-5wt% of B2O3, 0.5-2wt% of BaO and/or 0.5-3wt% of CaO and 1-5wt% of MgO. The production method comprises the steps of material preparation, primary preparation of a mixture, ball-mill mixing, melting, molding and annealing treatment. According to the photosensitive glass, the dielectric coefficient at a room temperature or above 1MHz is 4.2-5.6 and the dielectric loss is 2*10<-3> to 4*10<-3>. The low-dielectric loss sensitized photosensitive glass has the characteristics that the strength and the photochemical stability of a glass body of the un-sensitized part are high, the dielectric coefficient and the dielectric loss during high-frequency working are low, the stability during working is high, the etching depth-to-width ratio of the sensitized glass is high and the production process is simple and convenient.

Description

technical field [0001] The invention relates to the technical field of photosensitive glass production, in particular to a sensitizable photosensitive glass with low dielectric loss and a production method. Background technique [0002] Photosensitive glass is a special functional material. After being irradiated with ultraviolet light of a specific wavelength, a photochemical reaction will occur in the exposed part of the glass. After exposure, heat treatment at a specific temperature can form microcrystals. Compared with the initial amorphous glass, microcrystals The part exhibits distinct optical, mechanical and chemical properties; compared with the unexposed and heat-treated part, the exposed heat-treated part of the glass is easily etched away in some etching solutions, and the unexposed part is etched away easily. The eclipse ratio can reach more than 20:1, so that glass can be made into various complex three-dimensional graphics we need in a very simple and effective...

Claims

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Application Information

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IPC IPC(8): C03C3/095C03C6/04C03C4/04
CPCC03C3/095C03C1/00C03C4/04
Inventor 陈宏伟张鹏张继华
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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