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Method for improving LED (light emitting diode) photoelectric characteristics by utilizing V type defects

A technology for photoelectric characteristics and defects, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as deterioration of photoelectric performance of LED devices, achieve the effect of improving photoelectric characteristics, increasing luminous efficiency, and the method is simple and feasible

Active Publication Date: 2017-06-13
EPITOP PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Studies have shown that V-shaped defects in the light-emitting layer have become the main leakage channel of LED devices, leading to the deterioration of the photoelectric performance of LED devices

Method used

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  • Method for improving LED (light emitting diode) photoelectric characteristics by utilizing V type defects
  • Method for improving LED (light emitting diode) photoelectric characteristics by utilizing V type defects
  • Method for improving LED (light emitting diode) photoelectric characteristics by utilizing V type defects

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Embodiment 1

[0043] This embodiment provides a method for improving the photoelectric characteristics of LEDs by using V-shaped defects, please refer to figure 2 and image 3 , including:

[0044] 1. Growing a gallium nitride buffer layer 2 and a non-doped gallium nitride layer 3 sequentially on a substrate 1, wherein the substrate 1 is a sapphire substrate.

[0045] 2. A shallow well layer 41 is grown on the surface of the non-doped gallium nitride layer 3, and the material of the shallow well layer 41 is In 0.2 Ga 0.8 N, the thickness is The growth conditions are: the pressure is about 200 torr, and the temperature is about 820°C.

[0046] 3. A second N-type gallium nitride layer 42 is grown on the surface of the shallow well layer 41 with a thickness of The doping concentration of Si is 5×10 18 / cm 3 , the growth conditions are: the pressure is about 200 torr, and the temperature is about 820°C.

[0047] 4. Growing a layer of N-type GaN aluminum layer 43 on the surface of the...

Embodiment 2

[0055] This embodiment provides a method for improving the photoelectric characteristics of LEDs by using V-shaped defects, please refer to figure 2 and Figure 4 , including:

[0056] 1. Growing a gallium nitride buffer layer 2 and a non-doped gallium nitride layer 3 sequentially on a substrate 1, wherein the substrate 1 is a sapphire substrate.

[0057] 2. A shallow well layer 41 is grown on the surface of the non-doped gallium nitride layer 3, and the material of the shallow well layer 41 is In 0.2 Ga 0.8 N, the thickness is The pressure is about 200 torr and the temperature is about 820°C.

[0058] 3. A second N-type gallium nitride layer 42 is grown on the surface of the shallow well layer 41 with a thickness of The doping of Si is 5×10 18 / cm 3 , the pressure is about 500torr, and the temperature is about 820°C.

[0059] 4. Growing a layer of N-type GaN aluminum layer 43 on the surface of the second N-type GaN layer 42 with a thickness of The doping of Si is...

Embodiment 3

[0067] This embodiment provides a method for improving the photoelectric characteristics of LEDs by using V-shaped defects, please refer to figure 2 and Figure 5 , including:

[0068] 1. Growing a gallium nitride buffer layer 2 and a non-doped gallium nitride layer 3 sequentially on a substrate 1, wherein the substrate 1 is a sapphire substrate.

[0069] 2. A shallow well layer 41 is grown on the surface of the non-doped gallium nitride layer 3, and the material of the shallow well layer 41 is In 0.2 Ga 0.8 N, the thickness is The pressure is about 200 torr and the temperature is about 820°C.

[0070] 3. A second N-type gallium nitride layer 42 is grown on the surface of the shallow well layer 41 with a thickness of The doping concentration of Si is 5×10 18 / cm 3 , and, during the growth process of the second N-type gallium nitride layer 42 , the temperature is maintained at about 820° C., and the pressure is gradually increased from 200 torr to 500 torr.

[0071] ...

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Abstract

The invention provides a method for improving LED (light emitting diode) photoelectric characteristics by utilizing V type defects. The method comprises the step of sequentially growing a gallium nitride buffer layer, a non-doping gallium nitride layer, a V type defect layer, a first N type gallium nitride layer, an MQW luminous layer and a P type gallium nitride layer on a substrate, wherein the V type defect layer is of a superlattice structure. The invention also provides an LED epitaxial structure. The V type defects are utilized; the LED epitaxial quantum well efficiency is improved; the LED luminous efficiency is further improved; meanwhile, the LED photoelectric characteristics are improved; the electricity leakage is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor LED lighting, in particular to a method for improving the photoelectric characteristics of LEDs by using V-shaped defects. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a light-emitting device that converts electrical energy into light energy. Since the invention of LED by scientists in the United States and Japan in the 1990s, light-emitting diodes have been considered green energy and are widely used in indications, displays, Decoration and many other fields. [0003] As the demand for LEDs in the lighting field expands, the requirements for brightness and reliability of LEDs continue to increase. At present, sapphire is generally used as the substrate for heterogeneous epitaxy. Due to the large lattice mismatch, the dislocation density of the GaN (gallium nitride)-based epitaxial layer is very high, and vacancies, substitution atoms, and interstitial a...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/04H01L33/06
CPCH01L33/025H01L33/04H01L33/06
Inventor 腾龙霍丽艳黄小辉康建梁旭东
Owner EPITOP PHOTOELECTRIC TECH
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