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Based on r surface al 2 o 3 Non-polar a-face Aln thin film of graphic substrate and preparation method thereof

A graphic substrate, non-polar technology, applied in the field of microelectronics, can solve the problems of long production cycle, complex process, high cost, etc., and achieve the effect of reducing material stress, simplifying process, and improving material quality

Active Publication Date: 2019-12-31
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to these Al 2 o 3 The production of graphic substrates needs to go through the photolithography process, so the process is more complicated, the production cycle is long and expensive

Method used

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  • Based on r surface al <sub>2</sub> o <sub>3</sub> Non-polar a-face Aln thin film of graphic substrate and preparation method thereof
  • Based on r surface al <sub>2</sub> o <sub>3</sub> Non-polar a-face Aln thin film of graphic substrate and preparation method thereof
  • Based on r surface al <sub>2</sub> o <sub>3</sub> Non-polar a-face Aln thin film of graphic substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1, the preparation of an r-plane Al-based solution with an AlN nucleation layer thickness of 70nm, a graded AlGaN layer thickness of 3000nm and a nonpolar a-plane AlN layer thickness of 1000nm 2 o 3 Nonpolar a-plane AlN films for patterned substrates.

[0037] Step 1, facing Al on the r side 2 o 3 The substrate is ground.

[0038] Al 2 o 3 Place the substrate horizontally, select diamond sandpaper with a particle diameter of 9 μm, place it on the surface of the substrate, and apply a force of 9 Newtons to make the sandpaper parallel to the Al 2 o 3 Reference edge grinding of the substrate, in Al 2 o 3 A jagged stripe pattern is ground on the substrate, such as figure 2 shown.

[0039] Step 2, for the ground Al 2 o 3 The substrate is cleaned.

[0040] The polished r-surface Al 2 o 3 The substrate was first placed in HF acid for ultrasonic cleaning for 10 minutes, then ultrasonically cleaned for 10 minutes in acetone solution, absolute ethanol soluti...

Embodiment 2

[0050] Example 2, the preparation of an r-plane Al with a thickness of 30nm in the AlN nucleation layer, a thickness of the AlGaN layer with a graded Al composition of 1500nm and a non-polar a-plane AlN layer thickness of 700nm 2 o 3 Nonpolar a-plane AlN films for patterned substrates.

[0051] Step 1, facing Al on the r side 2 o 3 The substrate is ground.

[0052] Al 2 o 3 Place the substrate horizontally, select diamond sandpaper with a particle diameter of 5 μm, place it on the surface of the substrate, and apply a force of 5 Newtons to make the sandpaper perpendicular to the Al 2 o 3 Reference edge grinding of the substrate, in Al 2 o 3 A jagged stripe pattern is ground on the substrate, such as figure 2 shown

[0053] Step 2, for the ground Al 2 o 3 The substrate is cleaned.

[0054] The polished r-surface Al 2 o 3 The substrate was ultrasonically cleaned in HF acid for 3 minutes, then ultrasonically cleaned in acetone solution, absolute ethanol solution a...

Embodiment 3

[0064] Example 3, the preparation of an r-plane Al-based AlN layer with a thickness of 110nm, a graded AlGaN layer thickness of 4500nm and a nonpolar a-plane AlN layer thickness of 1200nm 2 o 3 Nonpolar a-plane AlN films for patterned substrates.

[0065] Step A, the r surface Al 2 o 3 Place the substrate horizontally, select diamond sandpaper with a particle diameter of 15 μm, place it on the surface of the substrate, and apply a force of 15 Newtons to make the sandpaper parallel to the Al 2 o 3 Reference edge grinding of the substrate, in Al 2 o 3 A jagged stripe pattern is ground on the substrate, such as figure 2 shown.

[0066] Step B, the polished r-surface Al 2 o 3 The substrate was ultrasonically cleaned in HCl acid for 15 minutes, then ultrasonically cleaned in acetone solution, absolute ethanol solution and ionized water for 15 minutes, and finally dried with nitrogen.

[0067] Step C, the r surface Al 2 o 3 The substrate is placed in the metal organic c...

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Abstract

The invention discloses a non-polar a surface AlN thin film based on an r surface Al2O3 substrate, mainly to solve the problems that the existing process is complicated, the preparation period is long, and the cost is high. The non-polar a surface AlN thin film based on the r surface Al2O3 patterned substrate comprises an r surface Al2O3 substrate layer with a thickness of 200 to 500 um, an AlN nucleating layer with a thickness of 30 to 110 nm, an AlGaN layer with a gradually-varying Al component with a thickness of 1500 to 5500 nm and a non-polar a surface AlN layer with a thickness of 700 to 1200 nm from bottom to top; the surface of the r surface Al2O3 substrate layer is provided with sawtooth stripes formed by grinding of emery paper; and the Al component in the AlGaN layer with a gradually-varying Al component gradually varies from 0.01 to 1. The preparation process needs no photoetching, the preparation period is shortened, the fee cost is reduced, and the non-polar a surface AlN thin film based on the r surface Al2O3 patterned substrate can be used for making non-polar a surface AlN-based ultraviolet and deep ultraviolet semiconductor devices.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a preparation method of an AlN thin film, which can be used for making nonpolar a-plane AlN-based ultraviolet and deep ultraviolet semiconductor devices. [0002] technical background [0003] Group III-V nitride semiconductor materials, such as AlN-based, GaN-based, InN-based and other semiconductor materials, often have large gap widths, such as 6.2eV for AlN, 3.42eV for GaN, and 0.7eV for InN. Therefore, people Various heterojunction structures are generally formed using these III-V compound semiconductor materials. In particular, the InGaN material system has achieved great success in blue LEDs. In 2014, Isamu Akasaki, Hao Amano and Shuji Nakamura won the Nobel Prize in Physics for their great contributions to blue LEDs. In addition, due to the large band gap of AlGaN system materials, the emission wavelength is very small. If the ratio of Ga and Al is adj...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L23/13
CPCH01L21/02013H01L23/13
Inventor 许晟瑞赵颖范晓萌李培咸牛牧童张进成林志宇姜腾郝跃
Owner XIDIAN UNIV