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Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, which can be used in semiconductor/solid-state device manufacturing, photolithography process exposure devices, and patterned surface photolithography processes, etc., and can solve problems such as discount or reduction of lithography effect and photoresist related problems.

Active Publication Date: 2017-06-20
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, EUV lithography still has photoresist-related disadvantages, e.g. relative to sensitivity and / or efficiency
Therefore, the lithography effect is discounted or reduced

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

Examples

Experimental program
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Embodiment Construction

[0021] The following disclosure provides many different embodiments or illustrations for implementing different features of the presented inventive subject matter. The specific illustrations of components and arrangements described below are for the purpose of simplifying the present invention. These are of course only examples and are not intended to be limiting. For example, the description that the first feature is formed on or above the second feature includes the embodiment that the first feature and the second feature are in direct contact, and also includes that other features are formed between the first feature and the second feature, An embodiment in which the first feature and the second feature are not in direct contact. In addition, the present invention repeats element symbols and / or letters in various illustrations. This repetition is for simplicity and clarity and does not imply any relationship between the various embodiments and / or configurations discussed....

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Abstract

The invention provides a manufacturing method of a semiconductor device. A semiconductor substrate is provided. A layer including an additive component is formed over the semiconductor substrate. The additive component includes a metal cation. One or more bonds are formed to bond the metal cation and one or more anions. Each of the one or more anions is one of a protecting group and a polymer chain bonding component. The polymer chain bonding component is bonded to a polymer chain of the layer. The layer is exposed to a radiation beam.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a method of using a photosensitive material for photolithography. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced many generations of ICs, each with smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of manufacturing and producing ICs, and similar developments in IC manufacturing and production are necessary in order to achieve these advances. In the course of IC development, functional density (ie, the number of cross-linked devices per wafer area) generally increases as geometry size (ie, the smallest component (or line) that can be created in a single process) decreases. [0003] As the size of semiconductor devices continues to shrink, such as below the 20nm node, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F7/004
CPCG03F7/004H01L21/0273G03F7/0042G03F7/091G03F7/11G03F7/168H01L21/0271G03F7/16G03F7/20G03F7/32
Inventor 訾安仁张庆裕王建惟
Owner TAIWAN SEMICON MFG CO LTD