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P-type PERC double-sided solar cell and module, system and preparation method thereof

A solar cell and double-sided technology, applied in the field of solar cells, can solve the problems of complex N-type double-sided cell technology and high price of N-type silicon wafers, and achieve the effects of improving photoelectric conversion efficiency, high photoelectric conversion efficiency, and easy promotion.

Active Publication Date: 2017-06-23
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the price of N-type silicon wafers is high, and the process of N-type double-sided solar cells is complicated; therefore, how to develop high-efficiency and low-cost double-sided solar cells has become a hot spot for companies and researchers.

Method used

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  • P-type PERC double-sided solar cell and module, system and preparation method thereof
  • P-type PERC double-sided solar cell and module, system and preparation method thereof
  • P-type PERC double-sided solar cell and module, system and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment approach

[0077] It should be noted that the first laser grooving unit 81 has multiple implementations, including:

[0078] (1) Each group of first laser grooving units 81 includes a first laser grooving body 82 arranged in the horizontal direction. At this time, the first laser grooving units 81 are continuous linear grooving areas, specifically as Image 6 shown. A plurality of first laser grooving units 81 are arranged vertically.

[0079] (2) Each group of first laser grooving units 81 includes a plurality of first laser grooving bodies 82 arranged in the horizontal direction. At this time, the first laser grooving units 81 are line-segment non-continuous linear grooving areas, specifically Such as Figure 5 shown. The plurality of first laser grooved bodies 82 may be two, three, four or more, but not limited thereto. A plurality of first laser grooving units 81 are arranged vertically.

[0080] When each group of first laser grooving units 81 includes a plurality of first lase...

Embodiment 1

[0124] (1) Form a suede surface on the front and back of the silicon wafer, and the silicon wafer is P-type silicon;

[0125] (2) Diffusion of the silicon wafer to form an N-type emitter;

[0126] (3) Remove the front phosphosilicate glass and surrounding PN junctions formed during the diffusion process;

[0127] (4) Deposit aluminum oxide film on the back of the silicon wafer;

[0128] (5) Deposit a silicon nitride film on the back of the silicon wafer;

[0129] (6) Deposit a silicon nitride film on the front side of the silicon wafer;

[0130] (7) Laser grooving the back of the silicon wafer to form a first laser grooving area, the first laser grooving area includes multiple groups of first laser grooving units arranged in the horizontal direction, and each group of first laser grooving units Including one or more first laser grooved bodies arranged in the horizontal direction, the length of the first laser grooved body is 1000 microns, and the width is 40 microns;

[01...

Embodiment 2

[0138] (1) Form a suede surface on the front and back of the silicon wafer, and the silicon wafer is P-type silicon;

[0139] (2) Diffusion of the silicon wafer to form an N-type emitter;

[0140] (3) Remove the front phosphosilicate glass and surrounding PN junctions formed by the diffusion process, and polish the back of the silicon wafer;

[0141] (4) Deposit aluminum oxide film on the back of the silicon wafer;

[0142] (5) Deposit a silicon nitride film on the back of the silicon wafer;

[0143] (6) Deposit a silicon nitride film on the front side of the silicon wafer;

[0144] (7) Laser grooving the back of the silicon wafer to form a first laser grooving area, a second laser grooving area and a third laser grooving area, the first laser grooving area includes multiple groups of first Laser grooving units, each group of first laser grooving units includes one or more first laser grooving bodies arranged in the horizontal direction, the length of the first laser groovi...

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Abstract

The invention discloses a P-type PERC double-sided solar cell comprising a back silver electrode, back aluminum gate lines, a back passivation layer, P-type silicon, an N-type emitter, a front silicon nitride film, and a front silver electrode in sequence. The back silver electrode and the back aluminum gate lines are connected perpendicularly. Gate line spines are arranged on the back aluminum gate lines. An aluminum gate frame is arranged around the back aluminum gate lines. The gate line spines are connected with the back aluminum gate lines. The aluminum gate frame is connected with the back aluminum gate lines and the back silver electrode. The back passivation layer is grooved by laser to form first laser grooving areas, and the back aluminum gate lines are connected with the P-type silicon through the first laser grooving areas. Each first laser grooving area includes multiple first laser grooving units arranged in the horizontal direction. Each first laser grooving unit includes one or more first laser grooving bodies arranged in the horizontal direction. The back aluminum gate lines are perpendicular to the first laser grooving bodies. The P-type PERC double-sided solar cell has the advantages of simple structure, low cost, easy promotion, and high photoelectric conversion efficiency.

Description

technical field [0001] The present invention relates to the field of solar cells, and in particular to a P-type PERC double-sided solar cell and a method for preparing the above-mentioned P-type PERC double-sided solar cell. Solar system with PERC bifacial solar cells. Background technique [0002] Crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using the photovoltaic effect. Under the action, holes flow from the N region to the P region, electrons flow from the P region to the N region, and a current is formed after the circuit is turned on. [0003] Traditional crystalline silicon solar cells basically only use front passivation technology, depositing a layer of silicon nitride on the front of the silicon wafer by PECVD to reduce the recombination rate of minority carriers on the front surface, which can greatly increase the open circuit voltage and short circuit of crystalline ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/022425H01L31/022441H01L31/0684H01L31/1804H01L31/1868Y02E10/547Y02P70/50H01L31/022433H01L31/068H01L31/1864H01L21/76H01L31/047Y02E10/50H01L31/02366
Inventor 林纲正方结彬陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD