Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method of exciting diffusion of metal atoms in silicon in room temperature environment

A metal atom and environment technology, applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of high cost, complicated procedures, low room temperature diffusion coefficient, etc., and achieve low secondary pollution, simple and fast method, cost low cost effect

Inactive Publication Date: 2017-06-27
PEKING UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The room temperature diffusion coefficient of impurity atoms in silicon materials is usually very small. If there is an obvious diffusion of impurity atoms in silicon, it usually requires a high temperature of seven, eight hundred or even thousands of degrees Celsius and a long time. Not only is the procedure complicated, the cost is high, and Huge energy consumption, pollutes the environment, and is easily contaminated by impurities from the surrounding environment during the high-temperature heating process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of exciting diffusion of metal atoms in silicon in room temperature environment
  • Method of exciting diffusion of metal atoms in silicon in room temperature environment
  • Method of exciting diffusion of metal atoms in silicon in room temperature environment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A P-type solar-grade Czochralski silicon single wafer is selected, polished on one side, with a resistivity of 1.9Ω·cm and a thickness of 625μm. First, the silicon wafers were ultrasonically cleaned with acetone, ethanol, and deionized water for 10 min, respectively. Then, the polished surface of the silicon wafer is irradiated with protons at room temperature, and the protons obtain energy from an accelerating electric field of 50kV, and then bombard the silicon wafer on the target plate, and the irradiation dose is 1E16 / cm 2 and 1E18 / cm 2 , the current is 0.5mA, and the cooling water temperature in the target disk is 17°C. Finally, the SIMS method was used to obtain the distribution of Fe concentration with depth in the sample after proton irradiation. The results are as follows: figure 1 shown. The larger the irradiation dose, the higher the Fe concentration near the surface, when the dose reaches 1E18 / cm 2 , the highest surface concentration can reach 3.4E19atom...

Embodiment 2

[0034] A P-type solar-grade Czochralski silicon single wafer is selected, polished on one side, with a resistivity of 1.9Ω·cm and a thickness of 625μm. First, the silicon wafers were ultrasonically cleaned with acetone, ethanol, and deionized water for 10 min, respectively. Then, the polished surface of the silicon wafer is irradiated with protons. After the protons get energy from an accelerating electric field of 50kV, they bombard the silicon wafer on the target disk. The irradiation dose is 1E16 / cm 2 and 1E18 / cm2 , the current is 0.5mA, and the cooling water temperature in the target disk is 17°C. Finally, the SIMS method was used to obtain the distribution of Cr concentration with depth in the sample after proton irradiation. The results are as follows: figure 2 shown. The larger the irradiation dose, the higher the Cr concentration near the surface, when the dose reaches 1E18 / cm 2 , the highest surface concentration can reach 2E19 atoms / cm 3 The depth of action can ...

Embodiment 3

[0036] A P-type solar-grade Czochralski silicon single wafer is selected, polished on one side, with a resistivity of 1.9Ω·cm and a thickness of 625μm. First, the silicon wafers were ultrasonically cleaned with acetone, ethanol, and deionized water for 10 min, respectively. Then, the polished surface of the silicon wafer is irradiated with protons. After the protons get energy from an accelerating electric field of 50kV, they bombard the silicon wafer on the target disk. The irradiation dose is 1E16 / cm 2 and 1E18 / cm 2 , the current is 0.5mA, and the cooling water temperature in the target disk is 17°C. Finally, the SIMS method was used to obtain the distribution of Cu concentration with depth in the sample after proton irradiation. The results are as follows: image 3 shown. The larger the irradiation dose, the higher the Cu concentration near the surface, when the dose reaches 1E18 / cm 2 , the highest surface concentration can reach 2E19 atoms / cm 3 , the depth of action c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method of exciting diffusion of metal atoms in silicon in a room temperature environment. Proton irradiation is carried out on a silicon material or a silicon device in the room temperature environment, and the metal atoms are excited to be diffused in silicon. The method is simple and convenient, low in cost, far less influenced by secondary pollution compared with a high-temperature processing method, and has a hidden application prospect in gettering and doping fields of metal in silicon. As no high temperature is needed, the method can be applied to the silicon material and also applied to atom diffusion of metal in silicon devices such as a large-scale integrated circuit, a solar cell, and photodetector.

Description

technical field [0001] The invention relates to a method for stimulating the diffusion of metal atoms in silicon, in particular to a method for stimulating the diffusion of metal atoms in silicon by proton irradiation at room temperature. Background technique [0002] Silicon single crystals contain transition metal impurities such as iron, nickel, chromium, etc., and devices are inevitably contaminated by various transition metal impurities to varying degrees during the preparation process. For silicon materials, transition metal impurities usually have deep energy levels in the silicon forbidden band, thus determining the minority carrier lifetime. The existence of these impurities will reduce the non-equilibrium carrier lifetime or compensate the shallow impurities that determine the conductivity type and conductivity of the material. In most cases, it will have an adverse effect on the performance of silicon devices, and some of the effects are serious. For example, in l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L21/22
CPCH01L21/268H01L21/22
Inventor 秦国刚侯瑞祥彭士香张景丰张艾霖李艳平徐万劲李磊
Owner PEKING UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com