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A good heat dissipation ga 2 o 3 Base metal oxide semiconductor field effect transistor and its preparation method

An oxide semiconductor and field effect transistor technology is applied in the field of Ga2O3-based metal oxide semiconductor field effect transistors and their preparation, and achieves the effects of low price, easy integration and good heat dissipation

Active Publication Date: 2019-07-02
上海镓旦电子信息有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Thus, a good heat dissipation Ga 2 o 3 Based MOSFET and its preparation method, while solving the problem of Ga 2 o 3 Quality issues of heteroepitaxy

Method used

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  • A good heat dissipation ga <sub>2</sub> o <sub>3</sub> Base metal oxide semiconductor field effect transistor and its preparation method
  • A good heat dissipation ga <sub>2</sub> o <sub>3</sub> Base metal oxide semiconductor field effect transistor and its preparation method
  • A good heat dissipation ga <sub>2</sub> o <sub>3</sub> Base metal oxide semiconductor field effect transistor and its preparation method

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Embodiment 1

[0028] A good heat dissipation Ga 2 o 3 The base MOSFET is sequentially composed of substrate 1, Ga 2 o 3 Buffer 2, Ga 2 o 3 Epitaxial Ga on buffer layer 2 2 o 3 The channel layer 3, the mutually separated source region 4 and the drain region 5 prepared on the channel layer 3, the Al deposited on the source region 4, the drain region 5 and part of the channel layer 3 2 o 3 An insulating layer 6, a source electrode 7, a gate electrode 8 and a drain electrode 9 prepared by thermal evaporation on the source region 4, the drain region 5 and the insulating layer 6; it is characterized in that: the substrate 1 is a Si single crystal, and the substrate 1 and the Ga 2 o 3 A nitride and oxide mixed multilayer structure 101 is also prepared in the middle of the upper buffer layer 2; the mixed multilayer structure 101 is made of GaN-based multilayer structure film 10 and GaN-based multilayer structure film 10 prepared by high-temperature oxidation. 2 o 3 Thin layer 11, Ga 2 o...

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Abstract

The invention discloses a Ga2O3-baesd metal oxide semiconductor field effect transistor with good heat dissipation performance and a preparation method thereof, and belongs to the technical field of power semiconductor devices and preparation thereof. The device is formed by parts of a substrate, a Ga2O3 buffering layer, a Ga2O3 channel layer, a Ga2O3 source, a drain region, an Al2O3 insulation layer and a metal electrode, and is characterized in that the substrate is Si monocrystalline; a nitride and oxide mixed multilayer structure is prepared between the substrate and the Ga2O3 buffering layer; and the mixed multilayer structure is formed by a GaN-serial multilayer structure film, a Ga2O3 oxidation thin layer, an involuntary doped Ga2O3 lower buffering layer and a magnesium doped Ga2O3 semi-insulation layer. According to the invention, a heteroepitaxy problem of Ga2O3 materials is solved; disadvantages of poor heat dissipation performance and high selling price of the Ga2O3 monocrystalline substrate used by the current Ga2O3-baesd metal oxide semiconductor field effect transistor are overcome; and advantages of mature technology, low selling price, easy integration and good heat dissipation of the Si material can be used, so the provided Ga2O3-baesd metal oxide semiconductor field effect transistor is quite highly practical.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices and their preparation, in particular to a class of Ga 2 o 3 A base metal oxide semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] Semiconductor power devices mainly refer to semiconductor electronic devices used in power conversion and control circuits of power equipment. Among many power devices, high-power metal-oxide-semiconductor field-effect transistor (MOSFET) devices are very important for high-voltage transmission and power conversion appliances. High-voltage MOSFETs often have to withstand high voltages of hundreds or even thousands of volts, which places extremely high demands on materials. However, the widely used Si material has a bandgap of only 1.1eV and a very small breakdown field strength, so high-voltage devices must be obtained by using bipolar devices (such as insulated gate bipolar transistors) and thi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/267H01L23/373H01L21/02
Inventor 董鑫梁红伟张源涛夏晓川张宝林杜国同
Owner 上海镓旦电子信息有限公司
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