Unlock instant, AI-driven research and patent intelligence for your innovation.

Substrate processing method and substrate processing apparatus

A substrate processing method and a substrate processing device technology, which are applied in the direction of exposure devices, instruments, and optomechanical equipment in photolithography, can solve problems such as limitations and failures, and achieve the effects of suppressing offset and realizing overlapping of exposures

Active Publication Date: 2020-04-24
TOKYO ELECTRON LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a limit in improving the accuracy of the above-mentioned superimposition
Patent Document 1 describes that a scatterometer (Scatterometer) is used to detect an error related to superimposition, thereby controlling the scanning operation for exposure, but the above-mentioned problem when the wafer is placed on the stage has not been paid attention to. did not solve the problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0057] use Figure 1 ~ Figure 3 A substrate processing system comprising the coating and developing device 1 and the exposure device D4 for carrying out the substrate processing method of the present invention will be described. figure 1 , figure 2 , image 3 These are a plan view, a perspective view, and a schematic longitudinal sectional side view of the coating and developing device 1 , respectively. The coating and developing apparatus 1 is constituted by connecting a carrier unit D1, a process unit D2, and an interface unit D3 in a straight line. The interface component D3 is connected with the exposure device D4. In the following description, the direction in which the modules D1 to D3 are arranged is referred to as the front-rear direction. The carrier unit D1 transports the carrier C that accommodates the wafer W as a circular substrate from the outside of the coating and developing apparatus 1. The opening and closing unit 12 transfers the transfer mechanism 13 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
friction coefficientaaaaaaaaaa
Login to View More

Abstract

The present invention provides a technique capable of preventing a position where a substrate is exposed from shifting from a normal position during pattern exposure. In the substrate processing method of the present invention, the back surface of the substrate before pattern exposure is polished to roughen the back surface, and the substrate is a semiconductor wafer. In addition, no treatment for reducing roughness was performed on the polished rear surface. Through this surface roughening treatment, the contact area between the mounting table that absorbs the substrate and mounts the substrate at the time of exposure and the back surface of the substrate is reduced. Therefore, the back surface of the adsorbed substrate can slide on the mounting table, and the surface of the mounting table can be eliminated. deformation of the substrate. As a result, deviation of the exposure position of the substrate from the normal position can be suppressed, and an improvement in exposure overlap can be achieved.

Description

technical field [0001] The present invention relates to a substrate processing method and a substrate processing apparatus including processing of a substrate as a semiconductor wafer before pattern exposure. Background technique [0002] The semiconductor device has a multilayer wiring structure. In order to form this multilayer wiring structure, in the manufacturing process of a semiconductor device, a semiconductor wafer (hereinafter referred to as wafer) as a substrate is subjected to a plurality of photolithography steps for forming a mask for forming wiring. patterned resist pattern. Between each photolithography step, exposure processing is performed so that a shot is taken on the same region of the wafer. As the wiring of the above-mentioned semiconductor device is refined, it is required to improve the accuracy of alignment between the region imaged in the previous photolithography step and the region imaged in the subsequent photolithography step, that is, the ac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/02H01L21/67
CPCG03F7/705G03F7/70525G03F7/70633H01L21/02013H01L21/02016H01L21/67092H01L21/0274H01L21/67051H01L21/67219H01L21/68728H01L21/68742H01L21/6875H01L21/304B24B37/20G03F7/70716G03F7/70925H01L21/30625G03F7/706845H01L21/3043H01L21/6704H01L21/02052H01L21/3086
Inventor 久保明广小玉辉彦
Owner TOKYO ELECTRON LTD