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Wideband differential-to-single-end amplifier

A differential-to-single-ended, amplifier technology, applied in the direction of differential amplifiers, amplifiers, power amplifiers, etc., can solve the difficulty in meeting the requirements of system isolation indicators, poor performance of differential-to-single-ended amplifiers, reduced voltage margin and linearity, etc. problem, achieve low power consumption, high gain, and reduce power consumption

Inactive Publication Date: 2017-07-14
苏州博芯联电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The second is the low gain. The gain of the traditional common-gate structure amplifier largely depends on the load impedance, but the large resistance load will bring too much voltage drop, reducing the voltage margin and linearity; and the large inductance load Inductors both increase the chip area and cause the circuit to exhibit narrow-band gain characteristics
[0006] The third is the poor isolation. Due to the poor isolation of the traditional common-gate structure amplifier, this will cause the output signal to return to the input, which is difficult to meet the requirements of the system for the isolation index.
[0007] On the basis of a common-gate structure amplifier, the load resistor is generally replaced with an LC balun to realize the function of differential conversion to single-ended, but the LC balun has frequency-selective filtering characteristics, which will narrow the bandwidth and deteriorate the phase balance. The attenuation of the LC balun is large, so the performance of the differential-to-single-ended amplifier of this structure is poor, and it is not suitable for the RF front-end of the radio transmitter

Method used

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with accompanying drawing:

[0026] Such as figure 2 , the present invention is provided with input unit 1, choke unit 2, filter unit 3, amplifying unit 4 and balun unit 5; Vin-, the input end of the input unit 1 is connected to the choke unit 2, the output end of the input unit 1 is connected to the input end of the filter unit 3, the output end of the filter unit 3 is connected to the input end of the amplifying unit 4, and the output end of the amplifying unit 4 is connected to A balun unit, the balun unit outputs a single-ended radio frequency output signal.

[0027] Such as image 3 , the input unit 1 adopts a common gate structure, and the gate and source of the MOS transistors in the input stage are cross-coupled, and the differential input terminal realizes a 50-ohm input impedance through the input unit 1. The choke unit 2 provides a DC current path, and at the same time chokes the input s...

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Abstract

The invention discloses a wideband differential-to-single-end amplifier, overcoming deficiencies of a traditional amplifier of a common-gate structure and an LC Balun. The amplifier comprises an input unit, a choke unit, a filter unit, an amplification unit and a Balun unit, wherein positive and negative ends of a differential radio frequency input signal are respectively connected with a positive input end Vin+ and a negative input end Vin- of the input unit, the input end of the input unit is connected with the choke unit, the output end of the input unit is connected with the input end of the filter unit, the output end of the filter unit is connected with the input end of the amplification unit, the output end of the amplification unit is connected with the Balun unit, and the Balun unit outputs a single-end radio frequency output signal. According to the amplifier provided by the invention, power consumption of the amplifier can be reduced, and gain, isolation and phase balance of the amplifier can be improved on the basis of ensuring wideband characteristics.

Description

technical field [0001] The invention relates to an amplifier, in particular to a broadband differential-to-single-end amplifier. Background technique [0002] In various radio transmitters, the RF front-end amplifier is generally a single-ended structure, that is, the RF signal enters from the single-ended input end and is sent out from the single-ended output end. However, amplifiers with a single-ended structure are susceptible to the influence of bonding wires, resulting in gain attenuation problems, so radio transmitters use differential structures to solve the above problems. The output of the transmitter is connected to a single-ended antenna, so the RF front-end of the transmitter needs to have a differential-to-single-ended amplifier, and it is hoped that the amplifier has a certain gain, wider bandwidth, and better phase balance. [0003] Common-gate structure amplifiers are widely used in the design of broadband amplifiers, mainly because they have broadband input...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F3/193H03F3/24H03F3/45
CPCH03F1/0211H03F3/193H03F3/24H03F3/45179H03F2203/45031H03F2203/45034H03F2203/45084H03F2203/45156H03F2203/45201
Inventor 胡善文吴晨健
Owner 苏州博芯联电子科技有限公司
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