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Light-emitting film based on chlorine-doped graphene quantum dots and preparation method thereof

A technology of graphene quantum dots and light-emitting films, applied in light-emitting materials, chemical instruments and methods, nanotechnology for materials and surface science, etc., can solve problems such as poor film stability, and achieve good thermal stability, The effect of uniform size distribution

Inactive Publication Date: 2017-07-21
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a luminescent film based on chlorine-doped graphene quantum dots, which can be excited by an ultraviolet LED chip to emit high-intensity, stable white light, which is used to overcome the stability of existing quantum dot films bad question

Method used

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  • Light-emitting film based on chlorine-doped graphene quantum dots and preparation method thereof
  • Light-emitting film based on chlorine-doped graphene quantum dots and preparation method thereof
  • Light-emitting film based on chlorine-doped graphene quantum dots and preparation method thereof

Examples

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Effect test

Embodiment 1

[0046] Weigh 1.0 g of β-cyclodextrin, 1.0 ml of hydrochloric acid, and 25 ml of deionized water, and disperse them ultrasonically for 15 minutes to make them evenly mixed, and place them in a flanged hydrothermal kettle, and keep them warm at 140°C for 6 hours. Chlorine-doped graphene quantum dots (Cl-GQDs solution) can be obtained by filtering through a 0.22-micron filter membrane and dialysis with a 1000Da semi-permeable membrane for three days.

[0047] figure 1 It is the XPS full spectrum based on chlorine-doped graphene quantum dots provided by the embodiment of the present invention. figure 2 It is the PL spectrum based on chlorine-doped graphene quantum dots under 360 nm excitation provided by the embodiment of the present invention.

[0048] Weigh 11 grams of silicone resin, and stir vigorously to mix the silicone resin evenly; measure 1 ml of the prepared Cl-GQDs solution, drop it into the silicone resin, stir it manually for 10 minutes, and vacuum defoam 5 minutes...

Embodiment 2

[0051] Weigh 1.0 g of β-cyclodextrin, 1.5 ml of hydrochloric acid, and 25 ml of deionized water, and disperse them ultrasonically for 15 min to make them evenly mixed. Place them in a flanged hydrothermal kettle and keep them warm at 160°C for 6 hours. Chlorine-doped graphene quantum dots can be obtained by filtering with a 0.22-micron filter membrane and dialysis with a 1000 Da semi-permeable membrane for three days. Weigh 11 grams of silicone resin, and stir vigorously to make the silicone resin mix evenly; measure 1.5 ml of the prepared Cl-GQDs solution, drop it into the silicone resin, stir it manually for 10 minutes, and vacuum defoam 5 minutes; then measure 3 ml of the mixed glue solution and place it in a polytetrafluoroethylene mold, pre-bake it in a blast oven at 50 °C for 3 hours, and finally dry it at 80 °C for 24 hours to obtain solid Cl-GQDs / Silicone film.

Embodiment 3

[0053] Weigh 1.0 g of β-cyclodextrin, 2.0 ml of hydrochloric acid, and 25 ml of deionized water, and disperse them ultrasonically for 15 minutes to make them evenly mixed, and place them in a flanged hydrothermal kettle, and keep them warm at 160°C for 8 hours. Chlorine-doped graphene quantum dots can be obtained by filtering with a 0.22-micron filter membrane and dialysis with a 1000 Da semi-permeable membrane for three days. Weigh 11 grams of silicone resin, and stir vigorously to make the silicone resin mix evenly; measure 2 ml of the prepared Cl-GQDs solution, drop it into the silicone resin, stir it manually for 10 minutes, and vacuum defoam 5 minutes; then measure 3 ml of the mixed glue solution and place it in a polytetrafluoroethylene mold, place it in a blast oven at 50 °C for 3 hours, and finally dry it at 80 °C for 24 hours to obtain solid Cl-GQDs / Silicone film.

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Abstract

The invention provides a preparation method of a light-emitting film based on chlorine-doped graphene quantum dots and belongs to the technical field of light-emitting materials. The preparation method of the light-emitting film based on the chlorine-doped graphene quantum dots is characterized in that the chlorine-doped graphene quantum dots prepared by adopting a hydrothermal method are bound with a silicon resin matrix together, on one hand, silicon resin serves as a dispersing medium of the chlorine-doped graphene quantum dots to prevent agglomeration and fluorescence quenching of the graphene quantum dots, and on the other hand, mechanical properties and chemical stability are provided for the light-emitting film. The prepared light-emitting film has better transparency, heat stability and high luminous intensity and is suitable for ultraviolet excited white-light LED.

Description

technical field [0001] The invention belongs to the technical field of preparation of LED luminescent materials, and in particular relates to the preparation of chlorine-doped graphene quantum dots and the preparation of luminescent films by compounding them with silicone resin. Background technique [0002] The advantages of white LEDs are DC drive, fast response, small size, long life, all solid state, simple structure, non-toxic, good weather resistance, and high luminous efficiency. It is considered to be a green energy that illuminates the world in the 21st century. With the improvement of LED light efficiency and price drop, the market penetration rate of LED has increased rapidly. The current white LEDs mostly use rare earth phosphors as luminescent materials, but the large-scale popularization and application of such technologies is limited due to the use of rare earths as luminescent materials. On the one hand, because rare earths are non-renewable resources, fluor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/65C09K11/02B82Y20/00B82Y30/00B82Y40/00C08J5/18C08L83/04
CPCB82Y20/00B82Y30/00B82Y40/00C08J5/18C08J2383/04C09K11/025C09K11/65Y02B20/00
Inventor 汪桂根李甲兵王晓飞陈友消
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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