Method of fabricating tantalum nitride barrier layer and semiconductor device thereof
A metal gate and tantalum nitride technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as adverse interaction reactions and device performance effects, and achieve the effect of maintaining a stable ammonia gas flow capacity
Active Publication Date: 2017-07-25
TAIWAN SEMICON MFG CO LTD
View PDF16 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, the metal gate layer and the underlying dielectric layer material tend to interact unfavorably, which negatively affects the performance of the device
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0020] In order to make the description of the present invention more detailed and complete, the following provides an illustrative description of the implementation modes and specific examples of the present invention; but this is not the only form for implementing or using the specific embodiments of the present invention. The various embodiments disclosed below can be combined or replaced with each other when beneficial, and other embodiments can also be added to one embodiment, without further description or illustration. In the following description, numerous specific details will be set forth in order to enable readers to fully understand the following embodiments. However, embodiments of the invention may be practiced without these specific details.
[0021] Substantial reductions in transistor size can be achieved by replacing the familiar polysilicon gate electrode with a metal gate structure. The thickness of the gate oxide layer is also reduced to maintain device p...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method of fabricating a tantalum nitride barrier layer and a semiconductor device thereof. A method of fabricating tantalum nitride barrier layer in an ultra low threshold voltage semiconductor device is provided. The method includes forming a high-k dielectric layer over a semiconductor substrate. Subsequently, a tantalum nitride barrier layer is formed on the high-k dielectric layer. The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3. Next, a plurality of first metal gates is formed on the tantalum nitride barrier layer. The first metal gates are patterned, and then a second metal gate is formed on the tantalum nitride barrier layer. The tantalum and nitrogen ratio of the tantalum nitride isolation layer can be precisely adjusted, and the tantalum nitride isolation layer suppresses the diffusion of material between different layers, and the dielectric retardation is greatly reduced.
Description
technical field [0001] Embodiments of the present invention relate to a method for manufacturing a semiconductor device. In particular, a method for manufacturing a tantalum nitride isolation layer semiconductor device. Background technique [0002] Integrated circuit technology has developed rapidly in recent years. With the continuous improvement and updating of integrated circuits, the size of integrated circuits is becoming more and more compact, but the structure is becoming more and more complex. This phenomenon raises the threshold for making integrated circuits, which is also a part that is eager to be strengthened in this field for the development of integrated circuit manufacturing processes. During the development of integrated circuits, the functional density (that is, the number of connected devices per unit chip area) has increased, while the volume of devices (that is, the smallest element that can be manufactured by a general manufacturing process) has rela...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L21/02H01L29/423
CPCH01L21/02112H01L29/401H01L29/42316H01L21/28088H01L29/4966H01L29/513H01L29/517H01L29/78H01L21/28512H01L21/823842
Inventor 洪奇成王喻生陈文成魏浩涵钟明锦郑志成
Owner TAIWAN SEMICON MFG CO LTD