Semiconductor Wafer Processing Process

Abstract

The invention relates to a treatment process of a semiconductor chip. The treatment process of a semiconductor chip includes the steps: cleaning the surface of a semiconductor chip, and then immersing the chip in nonionic solution. The treatment process of a semiconductor chip can form a layer of physical protection film on a surface oxide layer of the surface-cleaned chip by means of the nonionics, thus effectively preventing the oxide layer contacting the oxygen in the air continuously so as to prevent continuous increasing of the thickness of the oxide layer to achieve good protection effect.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a processing technology for semiconductor wafers. Background technique [0002] Group III-V compound semiconductor materials represented by gallium arsenide (GaAs) are widely used in the fields of satellite communications, microwave devices, lasers and light-emitting diodes due to their unique electrical properties. The manufacture of devices such as heterojunction bipolar transistors, high electron mobility transistors, and LEDs requires the growth of epitaxial structures on the surface of high-quality substrates by molecular beam epitaxy or organometallic compound vapor phase epitaxy. With the continuous improvement of semiconductor device manufacturing process, the size of the device is getting smaller and higher, and the utilization rate is getting higher and higher. The quality of the semiconductor substrate, especially the quality of the wafer surface, has a greater i...

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Problems solved by technology

After cleaning the gallium arsenide surface with SC-1 or SC-2, although the oxide layer can be removed, a new oxide layer will still be formed when the wafer is exposed to air. If the oxide layer on the cleaning surface is not completely removed, or the cleaning and corrosion surface is uneven , the formation of a new oxide layer when the wafer is exposed to air will appear irregular, so EPI-Ready cannot be achieved. In the subsequent epitaxial growth, the epitaxial layer cannot grow, or it will affect the LED epitaxial growth structure, such as increased defects. etc., the technical scheme of CN102064090B is a further improvement of the above two methods, but it still does not protect the surface of the wafer after cleaning.

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