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Fluorecence spectrum measurement integrated circuit for cancer cell screening

A fluorescence spectrum and integrated circuit technology is applied in the field of fluorescence spectrum measurement integrated circuits, which can solve the problems of low power consumption and small size, and achieve the effects of small error, wide detection range and error avoidance.

Pending Publication Date: 2017-08-18
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the fluorescence spectrum measurement instruments used for cancer cell screening have been widely used, the fluorescence spectrum measurement instruments with high precision, small size, low power consumption and moderate price need to be developed

Method used

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  • Fluorecence spectrum measurement integrated circuit for cancer cell screening
  • Fluorecence spectrum measurement integrated circuit for cancer cell screening
  • Fluorecence spectrum measurement integrated circuit for cancer cell screening

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Embodiment Construction

[0027] Further illustrate the present invention below in conjunction with accompanying drawing.

[0028] A fluorescence spectrum measurement integrated circuit for cancer cell screening according to the present invention comprises a BDJ photocurrent extraction amplification circuit 1, a photocurrent flow direction selection circuit 2, a current-voltage conversion circuit 3, a reset control circuit 4, a voltage- The frequency conversion circuit 5, the shaping feedback circuit 6, and the duty cycle adjustment circuit 7 are composed of seven modules in total.

[0029] In the BDJ photocurrent extraction amplifier circuit 1, the shallow PN junction photodiode D1 and the deep PN junction photodiode D2 are in a reverse bias state, and the photocurrent flows out from the common anode of D1 and D2, and the PMOS transistors P1, P2, P3, P4 constitutes a current mirror with a Cascode structure, and the NMOS transistors N1, N2, N3, N4 and NMOS transistors N1, N2, N5, and N6 also constitute...

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Abstract

A fluorecence spectrum measurement integrated circuit for cancer cell screening comprises a BDJ (buried double p-n junction) photocurrent extraction amplifying circuit 1, a photocurrent direction selection circuit 2, a current-voltage conversion circuit 3, a reset control circuit 4, a voltage-frequency conversion circuit 5, a shaping feedback circuit 6 and a duty ratio regulating circuit 7. The integrated circuit takes a buried CMOS (complementary metal oxide silicon) double PN junction photodiode (BDJ) as a light sensing unit, converts a weak fluorescence signal into an electrical signal easy to measure, and extracts useful spectral information. An output end of the integrated circuit can be directly connected with a processor such as a singlechip without using an analog-to-digital conversion interface, and can achieve singlechip integration with the light sensing unit BDJ, and achieve miniaturization and intellectualization of a cancer cell fluorecence spectrum measurement system.

Description

technical field [0001] The invention relates to a fluorescent spectrum measurement integrated circuit for cancer cell screening, which uses a buried CMOS double PN junction photodiode (BDJ) as a light sensing unit to convert weak fluorescent signals into electrical signals that are easy to measure. Extract useful spectral information. The output end of the invention does not need an analog-to-digital conversion interface but can be directly connected to a processor such as a single chip microcomputer, and can be integrated with a light sensing unit BDJ single chip to realize the miniaturization and intelligence of the cancer cell fluorescence spectrum measurement system. Background technique [0002] Buried CMOS dual PN junction photodiodes, consisting of two vertically stacked diodes of different depths. The stacked structure of this device makes the transmission depth of light in the silicon crystal strongly dependent on the wavelength when the silicon material is used as...

Claims

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Application Information

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IPC IPC(8): G01N21/64G01J3/44H03F3/08H03K17/22H03K3/017
CPCH03F3/082H03K3/017H03K17/223G01J3/4406G01N21/64
Inventor 施朝霞吴柯柯杨章咪
Owner ZHEJIANG UNIV OF TECH
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