Integrated structure capable of suppressing leakage current of three-dimensional horizontal cross-point resistance conversion memory
A technology of resistance conversion and cross point, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of energy waste, read and write misoperation, and reduce the reliability of memory, so as to improve reliability and suppress leakage current. , the effect of saving power
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Embodiment 1
[0044] Below, refer to the attached figure 2 — Figure 4 The integrated structure of Embodiment 1 of the three-dimensional resistive memory array proposed by the present invention will be described.
[0045] In order to ensure the area utilization rate of the memory chip as much as possible, the present invention designs such as figure 2 A schematic of the chip layout is shown. The entire chip is planned as a Bank200. In order to reduce leakage current power consumption, Bank 200 is divided into several Block 201 along the direction of bit line 206, and each Block 201 passes a certain method (in figure 2 not shown) is connected to the bit line 206. The local bit line 205 in each Block201 passes through a certain method (in figure 2 not shown) to the corresponding bit line 206. The word line and horizontal line decoder 204 is placed on both sides of the Bank 200, and its function is to select a Block from all Blocks 201 in the Bank 200, and then provide proper bias fo...
Embodiment 2
[0059] Figure 7 A is a three-dimensional circuit diagram of Embodiment 2 of the present invention, with 4 storage layers in total; Figure 7 In A, the cross-sectional view along the BB' direction is as follows Figure 7 Shown in B; The manufacture of isolation unit does not need to increase extra process step almost, isolation unit 301 (1) can be manufactured simultaneously with the second storage layer or the third storage layer, isolation unit 301 (2) can be with the first layer The storage layer or the second storage layer is manufactured simultaneously; the isolation unit 301(i) has exactly the same structure as the common storage unit, but their functions are different: the common storage unit utilizes the conversion of its high and low resistance states to store data; and the isolation unit 301 (i) It plays the role of suppressing the leakage current in the circuit, and does not pay attention to the resistance state of the isolation unit, and it can be found that any a...
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