Preparation method for GaN nanoparticles

A nanoparticle and roasting technology is applied in the field of preparation of gallium nitride nanoparticles, and achieves the effects of simple preparation process, strong operability and low cost

Active Publication Date: 2017-08-25
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for preparing GaN nanoparticles with simple o...

Method used

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  • Preparation method for GaN nanoparticles
  • Preparation method for GaN nanoparticles
  • Preparation method for GaN nanoparticles

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Grind 1g of gallium nitrate and 1g of melamine thoroughly and mix them evenly, put them into a porcelain boat, bake at 800°C for 1 hour in a nitrogen atmosphere, then lower the temperature to 550°C, stop nitrogen, bake at a constant temperature in an air atmosphere for 1 hour, and cool naturally to room temperature to obtain GaN nanoparticles.

Embodiment 2

[0027] Grind 1g of gallium nitrate and 2g of melamine thoroughly and mix them evenly, put them into a porcelain boat, bake at 800°C for 1 hour in a nitrogen atmosphere, then lower the temperature to 550°C, stop nitrogen, bake at a constant temperature in an air atmosphere for 1 hour, and cool naturally to room temperature to obtain GaN nanoparticles.

Embodiment 3

[0029] Grind 1g of gallium nitrate and 4g of melamine thoroughly and mix them evenly, put them into a porcelain boat, bake at 800°C for 1 hour in a nitrogen atmosphere, then lower the temperature to 600°C, stop nitrogen, bake at a constant temperature in an air atmosphere for 1 hour, and cool naturally to room temperature to obtain GaN nanoparticles.

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Abstract

The invention discloses a preparation method for GaN nanoparticles. In the method, the mixture of gallium nitrate and melamine is sequentially roasted in high temperature under an inert atmosphere and an air atmosphere, and thereby the GaN nanoparticles are obtained. The purity of the GaN nanoparticles prepared by the method disclosed by the invention is high, the preparation process is simple and easy to operate, the cost is low, and the invention has the prospect of industrialized application.

Description

technical field [0001] The invention specifically relates to a preparation method of gallium nitride (GaN) nanoparticles. Background technique [0002] GaN has two structures of wurtzite and sphalerite, and its chemical properties are stable. At room temperature, GaN is insoluble in water, acid and alkali. GaN has a high melting point, about 1700°C, and high hardness. It is a good coating protection material. GaN has a band gap of up to 3.39eV, high thermal conductivity, high temperature resistance, and high voltage resistance. It is suitable for making high-power electronic devices and optical devices such as blue, green and ultraviolet light-emitting diodes (LEDs) and laser diodes (LDs). . In addition, GaN is expected to replace or partially replace noble metals in the field of industrial catalysis, and has important application prospects. The literature (Thermal Non-Oxidative Aromatization of Light Alkanes Catalyzed by Gallium Nitride, 2014, 126, 14330-14333) reported ...

Claims

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Application Information

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IPC IPC(8): C01B21/06B82Y30/00
CPCC01B21/0632C01P2002/72C01P2002/85C01P2004/03C01P2004/64
Inventor 刘昭铁郎洋陈建刚宋健罗群兴刘忠文
Owner SHAANXI NORMAL UNIV
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