Organic insulating layer-based gradient-doped IGZO thin-film transistor and preparation method thereof

A technology of organic insulating layer and thin film transistor, which is applied in the field of electronics, can solve the problems of organic insulating layer damage, lattice mismatch, large leakage current, etc., and achieve the effects of reducing damage, reducing defects, and solving biological pollution

Active Publication Date: 2017-09-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the lattice mismatch between the IGZO semiconductor and the organic insulating layer causes damage to the organic insulating layer by the subsequent DC magnetron sputtering IGZO film, and the leakage current is relatively large. The present invention provides a Preparation method of thin film transistor based on gradient doped active layer IGZO of organic insulating layer

Method used

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  • Organic insulating layer-based gradient-doped IGZO thin-film transistor and preparation method thereof
  • Organic insulating layer-based gradient-doped IGZO thin-film transistor and preparation method thereof
  • Organic insulating layer-based gradient-doped IGZO thin-film transistor and preparation method thereof

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Embodiment 1

[0030] A gradient doped IGZO thin film transistor based on an organic insulating layer, characterized in that it includes a substrate 1, a gate electrode 2, an organic insulating layer 3, a gradient doped IGZO semiconductor layer 4, and a gradient doped IGZO layer arranged in sequence from bottom to top. A source electrode 5 and a drain electrode 6 are juxtaposed on the semiconductor layer 4 , wherein the gradient doped IGZO semiconductor layer 3 includes the lowermost IGZO film 41 , the uppermost IGZO film 43 , and the middle layer IGZO film 42 with increasing concentrations in sequence.

[0031] Specifically, the material of the substrate 1 is glass; the material of the gate electrode 2 is indium tin oxide, and the thickness of the gate electrode 2 is 200 nm; the material of the organic insulating layer 3 is polymethyl methacrylate, and the thickness is 200 nm; the gradient doping In the IGZO semiconductor layer 4, the oxygen partial pressure of the lowermost IGZO thin film 4...

Embodiment 2

[0040] A gradient doped IGZO thin film transistor based on an organic insulating layer, characterized in that it includes a substrate 1, a gate electrode 2, an organic insulating layer 3, a gradient doped IGZO semiconductor layer 4, and a gradient doped IGZO layer arranged in sequence from bottom to top. A source electrode 5 and a drain electrode 6 are juxtaposed on the semiconductor layer 4 , wherein the gradient doped IGZO semiconductor layer 3 includes the lowermost IGZO film 41 , the uppermost IGZO film 43 , and the middle layer IGZO film 42 with increasing concentrations in sequence.

[0041] Specifically, the material of the substrate 1 is glass; the material of the gate electrode 2 is indium tin oxide, and the thickness of the gate electrode 2 is 200nm; the material of the organic insulating layer 3 is polyvinyl alcohol, and the thickness is 200nm; the gradient doped IGZO semiconductor layer In 4, the oxygen partial pressure of the lowermost IGZO film 41 is 4%, the thick...

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Abstract

The present invention provides an organic insulating layer-based gradient-doped IGZO thin-film transistor and relates to the technical field of electronics. The organic insulating layer-based gradient-doped IGZO thin-film transistor comprises a substrate, a gate electrode, an organic insulating layer and a gradient-doped IGZO semiconductor layer, wherein the substrate, the gate electrode, the organic insulating layer and the gradient-doped IGZO semiconductor layer are sequentially arranged from bottom to top. On the gradient-doped IGZO semiconductor layer, a source electrode and a drain electrode are arranged in parallel. The gradient-doped IGZO semiconductor layer comprises a lowermost IGZO thin-film layer, an uppermost IGZO thin-film layer, and an intermediate IGZO thin-film layer, wherein the concentrations of the lowermost IGZO thin-film layer, the uppermost IGZO thin-film layer, and the intermediate IGZO thin-film layer are sequentially increased. According to the technical scheme of the invention, the problem that the IGZO semiconductor and the organic insulating layer are not matched in lattice so as to cause the damage of the subsequent DC magnetron sputtering to the organic insulating layer and the formation of a large leakage current can be solved.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a gradient doped IGZO thin film transistor based on an organic insulating layer and a preparation method thereof. Background technique [0002] Flat panel displays (FPDs) are gradually replacing cathode ray displays (CRTs) and have dominated the display industry. The thin film transistor is used as the switch element of the drive circuit of the flat panel display, and its performance directly determines the quality of the display. In ordinary active-driven liquid crystal displays, hydrogenated amorphous silicon thin film transistors are generally used, but their further development is limited due to their shortcomings such as opacity, greater influence by visible light, and low carrier mobility. In recent years, due to the development requirements of organic light-emitting diode (AMOLED) display technology, the traditional hydrogenated amorphous silicon has far failed to mee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L29/24H01L29/51H01L29/786H01L21/34H01L21/02H01L21/445
CPCH01L21/02422H01L21/02565H01L21/02631H01L29/105H01L29/24H01L29/51H01L29/66969H01L29/7869
Inventor 张磊周斌张珊珊刘腾飞袁毅
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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