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Method for building CsPbBr3 nanosheet electroluminescent device by chemical vapor deposition (CVD)

An electroluminescent device and nanosheet technology, which is applied to electrical components, semiconductor devices, circuits, etc., can solve the problems of difficult realization of devices and failure to realize single nanostructure electrolysis, and achieve the effect of simple process technology and convenient control.

Active Publication Date: 2017-09-01
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Although optically pumped lasers and quantum dot LEDs from all-inorganic perovskite materials have been reported, electroluminescence based on single nanostructures has not been achieved.
The main difficulty is that CsPbX 3 It is readily soluble in solvents, including water and acetone, so CsPbX can be prepared by traditional microfabrication methods such as photolithography and electron beam exposure 3 devices that are difficult to implement

Method used

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  • Method for building CsPbBr3 nanosheet electroluminescent device by chemical vapor deposition (CVD)
  • Method for building CsPbBr3 nanosheet electroluminescent device by chemical vapor deposition (CVD)
  • Method for building CsPbBr3 nanosheet electroluminescent device by chemical vapor deposition (CVD)

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Embodiment 1

[0051] Take the ITO sheet as the substrate, cut it into 15mm×15mm size, wash it ultrasonically in acetone and ethanol solution for 15min respectively, take it out and dry it on a heating table at 120°C. The ITO glass substrate is placed on a high-speed rotary machine, and a layer of 600nm thick photoresist (negative glue) is spin-coated at 2500 / min and time 60s. Pre-baking, temperature 120°C, time 90s. Expose for 10s with a reticle mask, and each electrode of the designed pattern is independent of each other. Post-bake at 120°C for 90s. Then develop, time 20s. After hardening the film on a heating platform at 150°C for 5 minutes, put it into the ITO etching solution for 15 minutes to obtain the ITO electrode with the desired pattern. Wash the ITO glass with electrodes ultrasonically in acetone and ethanol solutions for 15 minutes, take it out and dry it in an oven at 60°C for the next step of CVD growth. The spacing between adjacent electrodes is 10 microns.

[0052] CsBr...

Embodiment 2

[0054] Take the ITO sheet as the substrate, cut it into 15mm×15mm size, wash it ultrasonically in acetone and ethanol solution for 15min respectively, take it out and dry it on a heating table at 120°C. The ITO glass substrate is placed on a high-speed rotary machine, and a layer of 600nm thick photoresist (negative glue) is spin-coated at 2500 / min and time 60s. Pre-baking, temperature 120°C, time 90s. Expose for 10s with a reticle mask, and the designed pattern is an interdigital electrode. Post-bake at 120°C for 90s. Then develop, time 20s. After hardening the film on a heating platform at 150°C for 5 minutes, put it into the ITO etching solution for 15 minutes to obtain the ITO electrode with the desired pattern. The ITO glass engraved with electrodes was ultrasonically washed in acetone and ethanol solutions for 15 minutes, and then taken out and dried in an oven at 60°C for the next step of CVD growth. The spacing between adjacent electrodes is 5 microns.

[0055] Cs...

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Abstract

The invention relates to a method for building a CsPbBr3 nanosheet electroluminescent device by chemical vapor deposition (CVD). The preparation method comprises the steps of loading CsBr powder and PbBr2 powder in a magnetic boat 1 according to a mole ratio being (1.85-2.05):1, laying an ITO glass sheet etched with an electrode on a magnetic boat 2, placing the magnetic boat 1 at a middle part of a horizontal tubular furnace, and placing the magnetic boat 2 at one end, near to an air outlet, of the horizontal tubular furnace; and introducing a carrier gas, discharging air in the furnace, introducing the carrier gas, rising a temperature to a heating temperature being 570-600 DEG C of the magnetic boat 1, rising the temperature to a heating temperature being 300-400 DEG C of the magnetic boat 2, and performing deposition to obtain a product. The CsPbBr3 nanosheet device is built on an ITO electrode initially by a simple method, and light emitting under electric injection is achieved. The obtained device has high-efficiency and stable performance and can be applied to a nanoscale photoelectric integrated circuit.

Description

technical field [0001] The present invention relates to a kind of CVD construction CsPbBr 3 The method for the electroluminescent device of the nanosheet belongs to the technical field of the photoelectric application of the new semiconductor material inorganic perovskite. [0002] technical background [0003] Single nanostructure electroluminescent devices, as nanoscale light sources, are an important unit in optoelectronic integrated systems. Usually, electroluminescence in nanostructures is realized by designing P-N junctions, electrons and holes are injected from n-type and p-type directions respectively, and recombine and emit light in the junction region. P, N-type changes generally need to be controlled by chemical doping, which is very difficult for single nanostructures. For single nanostructures of pure components, electroluminescence can also be realized near the metal-semiconductor Schottky junction, and its luminescence principle can be thermionic electron col...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/26C23C16/30
CPCC23C16/30H01L33/005H01L33/26
Inventor 潘安练胡学鹿朱小莉
Owner HUNAN UNIV
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