High-temperature resistance element and preparation method thereof

A resistance element, high temperature technology, applied in the field of high temperature resistance element and its preparation, can solve the problems of uneven dispersion of resistance components, poor voltage resistance performance, uneven grain size, etc., and achieve low production cost and good attenuation performance , the effect of uniform dispersion of components

Inactive Publication Date: 2017-09-08
JURONG BOYUAN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The resistance components produced by this process are unevenly dispersed, have uneven grain size, low α coefficient, poor withstand voltage performance, and are prone to fatal defects such as thermal breakdown during use.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A high-temperature resistance element is prepared from the following raw materials by weight: 40-50 parts of polyvinylidene fluoride, 25-30 parts of carbon black, 1-5 parts of silver hydroxide, and 1-2 parts of silane coupling agent , 0.1-0.5 part of hydroquinone, 0.01-0.04 part of manganese dioxide, 0.01-0.04 part of antimony trioxide, and 0.01-0.02 part of lithium carbonate.

[0024] A preparation method of a high temperature resistance element, comprising:

[0025] S1. Mix all the powders evenly, and grind them into nano-powders in ethanol;

[0026] S2, adding the nano-powder obtained in step 1 into an internal mixer for mixing, mixing at a temperature of 200° C., mixing for 60 minutes, and pressing into thin slices;

[0027] S3. The sheet obtained in step 2 is stroked into chips of various sizes according to different specifications to obtain the high temperature resistance element.

Embodiment 2

[0029] A high-temperature resistance element is prepared from the following raw materials by weight: 40-50 parts of polyvinylidene fluoride, 25-30 parts of carbon black, 1-5 parts of silver hydroxide, and 1-2 parts of silane coupling agent , 0.1-0.5 part of hydroquinone, 0.01-0.04 part of manganese dioxide, 0.01-0.04 part of antimony trioxide, and 0.01-0.02 part of lithium carbonate.

[0030] A preparation method of a high temperature resistance element, comprising:

[0031] S1. Mix all the powders evenly, and grind them into nano-powders in ethanol;

[0032] S2, adding the nano-powder obtained in step 1 into an internal mixer for mixing, at a mixing temperature of 250° C., mixing for 30 minutes, and pressing into thin slices;

[0033] S3. The sheet obtained in step 2 is stroked into chips of various sizes according to different specifications to obtain the high temperature resistance element.

Embodiment 3

[0035] A high-temperature resistance element is prepared from the following raw materials by weight: 50-60 parts of polyvinylidene fluoride, 30-40 parts of carbon black, 5-8 parts of silver hydroxide, and 2-3 parts of silane coupling agent , 0.5-1 part of hydroquinone, 0.01-0.04 part of manganese dioxide, 0.01-0.04 part of antimony trioxide, and 0.01-0.02 part of lithium carbonate.

[0036] A preparation method of a high temperature resistance element, comprising:

[0037] S1. Mix all the powders evenly, and grind them into nano-powders in ethanol;

[0038] S2, adding the nano-powder obtained in step 1 into an internal mixer for mixing, mixing at a temperature of 200° C., mixing for 60 minutes, and pressing into thin slices;

[0039] S3. The sheet obtained in step 2 is stroked into chips of various sizes according to different specifications to obtain the high temperature resistance element.

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PUM

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Abstract

The embodiment of the invention discloses a high-temperature resistance element and a preparation method thereof, relating to the technical field of high-temperature resistors. The high-temperature resistance element is prepared from the following raw materials in parts by weight: 40-65 parts of a high-molecular polymer, 25-50 parts of a conductive filling, 1-10 parts of an inorganic filling, 1-5 parts of a coupling agent, 0.1-2 parts of an antioxidant and 0.01-0.1 part of a dispersing aid. The raw materials are simple, and the prepared high-temperature resistance element have uniformly-dispersed components and relatively high voltage resistance, can work in high-temperature environments such as automotive motors and has relatively high voltage-resistant level, so that the reliability of devices in high-temperature and high-voltage environments is improved.

Description

technical field [0001] The invention relates to the technical field of high temperature resistance resistance, in particular to a high temperature resistance element and a preparation method thereof. Background technique [0002] The positive temperature coefficient thermistor based on the polymer conductive composite material changes the resistivity by several orders of magnitude before and after the critical transition temperature, that is, the resistance of the PTC can increase with the increase of the ambient temperature in which it is used. , so that the current can be reduced or cut off at a higher temperature to protect against over-current and over-temperature. At present, such devices have been widely used in various circuit protection devices, such as lithium-ion batteries, automobile motors, etc. In general, crystalline polymer composites filled with conductive particles can exhibit a positive temperature coefficient (PTC) phenomenon, that is, at lower temperature...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L27/16C08K13/02C08K3/04C08K3/22C08K3/26C08K5/13C08K5/54H01C7/02H01C17/00
CPCC08K3/04C08K3/22C08K3/2279C08K3/26C08K5/13C08K5/54C08K13/02C08K2003/2262C08K2003/2286C08K2003/262C08K2201/011C08L2201/08H01C7/027H01C17/006C08L27/16
Inventor 刘刚王梅凤汤成平高进唐敏薛云峰
Owner JURONG BOYUAN ELECTRONICS
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