Manufacturing method for humidity sensor and humidity sensor manufactured by using method

A technology of a humidity sensor and a manufacturing method, which is applied to instruments, scientific instruments, measuring devices, etc., can solve the problems of weak resistance to external interference, small humidity capacitance, and large error, and achieve accurate measurement of humidity capacitance. , The effect of improving product volume rate and reducing pressure

Active Publication Date: 2017-09-08
SHANGHAI SHENXILING MICROELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional humidity sensor has several problems: (1) Sometimes the humidity sensor accidentally enters water, or is exposed to high humidity for a long time, and the humidity sensor will work abnormally
(2) The humidity sensitive capacitance value of the traditional humidity sensor is relatively small, the ability to resist external interference is weak, and the error is relatively large, so the measurement accuracy canno

Method used

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  • Manufacturing method for humidity sensor and humidity sensor manufactured by using method
  • Manufacturing method for humidity sensor and humidity sensor manufactured by using method
  • Manufacturing method for humidity sensor and humidity sensor manufactured by using method

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Embodiment Construction

[0045] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0046] Such as Figure 1 to Figure 10 As shown, the manufacturing method of the humidity sensitive sensor of the present invention comprises: Step 1: prepare conductive zero layer: use traditional ion implantation process to do N+ or P+ is heavily doped, and N+ or P+ layer 2 is formed after annealing. The material of this layer can also be an N+ or P+ silicon substrate that has been heavily doped as a whole, or it can be another layer of conductive metal zero layer. This layer of material covers the e...

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Abstract

The invention provides a manufacturing method for a humidity sensor and the humidity sensor manufactured by using the method. The manufacturing method comprises the following steps: forming a conductive zero layer on a silicon wafer substrate by using an ion implantation method and high-temperature annealing; growing a first silicon oxide dielectric layer on the conductive zero layer; forming first contact holes in the first silicon oxide dielectric layer; depositing a first metal film layer on the first silicon oxide dielectric layer by a physical vapor deposition method, and connecting the first metal film layer with the conductive zero layer through the first contact holes; forming a heating resistor, depositing a second silicon oxide dielectric layer, and forming second contact holes penetrating through the second silicon oxide dielectric layer; depositing a second metal film layer, and connecting the second metal film layer with the first metal film layer through the second contact holes; forming an interdigital capacitor; depositing a third silicon oxide dielectric layer; coating a humidity-sensitive polyimide film material. The manufacturing method provided by the invention has the beneficial effects that the heating resistor can be used for heating a humidity-sensitive capacitor and evaporating out excess water, so that the humidity sensor restores normal functions.

Description

technical field [0001] The invention relates to a manufacturing method of a sensor, in particular to a manufacturing method of a humidity sensitive sensor and a humidity sensitive sensor manufactured by the method. Background technique [0002] The method of making a humidity sensor with a humidity sensitive capacitor has been studied for a long time, and related patents have also been applied for and granted. However, the traditional humidity sensor has several problems: (1) Sometimes the humidity sensor accidentally enters water, or is exposed to a high humidity environment for a long time, and the humidity sensor will work abnormally. (2) The humidity-sensing capacitance of the traditional humidity sensor is relatively small, the ability to resist external interference is weak, and the error is relatively large, so the measurement accuracy cannot be improved. (3) After the humidity sensor is packaged, it is necessary to leave a window to connect the sensitive unit with t...

Claims

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Application Information

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IPC IPC(8): G01N27/22
CPCG01N27/223
Inventor 赖建文
Owner SHANGHAI SHENXILING MICROELECTRONICS TECH CO LTD
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