Unlock instant, AI-driven research and patent intelligence for your innovation.

Processing composition for polishing chemical machinery, and chemical machinery polishing method and washing method

A technology for treating compositions and chemical machinery, applied in polishing compositions containing abrasives, chemical instruments and methods, grinding tools, etc., can solve problems such as yield impact, and achieve the effect of effective removal

Inactive Publication Date: 2017-09-26
JSR CORPORATIOON
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Cobalt is easily eluted under acidic conditions, so the occurrence of corrosion due to acidic solutions, which has not been a major problem in copper wiring that has been miniaturized until now, has a large impact on yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing composition for polishing chemical machinery, and chemical machinery polishing method and washing method
  • Processing composition for polishing chemical machinery, and chemical machinery polishing method and washing method
  • Processing composition for polishing chemical machinery, and chemical machinery polishing method and washing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0064] Preferred embodiments of the present invention will be described in detail below. In addition, this invention is not limited to the following embodiment, Various modification examples implemented in the range which do not change the gist of this invention are included.

[0065] 1. Treatment composition for chemical mechanical polishing

[0066] The chemical mechanical polishing treatment composition according to one embodiment of the present invention is characterized by containing (A) a water-soluble amine (hereinafter also referred to as "(A) component"), (B) a water-soluble amine having a repeating unit containing an aromatic hydrocarbon group. polymer (hereinafter also referred to as "component (B)"), and an aqueous medium.

[0067]The processing composition for chemical mechanical polishing of this embodiment can be used as a "composition for chemical mechanical polishing" for polishing the surface to be treated. In this case, it is preferable to contain (D) abra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
viscosityaaaaaaaaaa
Login to View More

Abstract

The processing composition for polishing chemical machinery according to the present invention is characterized by containing (A) a water-soluble amine, (B) a water-soluble polymer having a repeating unit including an aromatic hydrocarbon group, and an aqueous medium. Preferably, the processing composition contains (C) an organic acid having an aromatic hydrocarbon group, and has a pH not lower than 9.

Description

technical field [0001] The invention relates to a treatment composition for chemical mechanical polishing, a chemical mechanical polishing method and a cleaning method. Background technique [0002] Chemical Mechanical Polishing (CMP) is a planarization technique in the manufacture of semiconductor devices, and has seen rapid spread. This CMP is a technique of pressing the object to be polished against a polishing pad, and sliding the object to be polished and the polishing pad against each other while supplying a chemical mechanical polishing aqueous dispersion on the polishing pad to chemically and mechanically polish the object to be polished. [0003] In recent years, along with the high-definition of semiconductor devices, the miniaturization of wiring layers including wirings, studs, and the like formed in semiconductor devices has been progressing. Along with this, a method of planarizing the wiring layer by chemical mechanical polishing is used. A wiring board of a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304
CPCH05K2203/0793C23F3/04C23G1/20H01L21/02074H01L21/3212B24B37/20B24B57/02C09G1/02C09G1/04H05K3/26C09K3/1463H01L21/30625C23F1/00H01L21/4846H01L21/4864H01L23/49866
Inventor 羽山孝弘三星兰亀井康孝西口直希三元清孝加茂理饭田雅史
Owner JSR CORPORATIOON