Inspection device and inspection method
An inspection device and inspection method technology, applied in image data processing, instruments, laser welding equipment, etc., can solve problems such as position marking of faulty parts
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no. 1 Embodiment approach
[0034] Such as figure 1 As shown, the inspection device 1 according to the present embodiment is a device for inspecting the semiconductor device D by specifying a fault location and the like in the semiconductor device D, which is a device under test (DUT: Device Under Test (device under test)). More specifically, the inspection device 1 identifies a fault location and places a mark around the fault location to indicate the fault location. Using this mark, it is possible to easily grasp the location of the failure specified by the inspection device 1 in the subsequent process of failure analysis.
[0035]As the semiconductor device D, there are integrated circuits having PN junctions such as transistors (such as small-scale integrated circuits (SSI: Small Scale Integration), medium-scale integrated circuits (MSI: Medium Scale Integration), large-scale integrated circuits (LSI: Large Scale Integration), etc. Integration), Very Large Scale Integration (VLSI: Very LargeScale In...
no. 2 Embodiment approach
[0082] Below, refer to Figure 5 , the inspection apparatus 1A according to the second embodiment will be described. In addition, the description of this embodiment will mainly focus on points different from the above-mentioned first embodiment.
[0083] Such as Figure 5 As shown, in the inspection apparatus 1A according to the second embodiment, a voltage is applied to the semiconductor device D from the power supply 51 . Next, light is output from the light source 12A, and the light is irradiated to the back surface D1 which is the substrate SiE of the semiconductor device D via the observation optical system 13A.
[0084] The light output from the light source 12A may be coherent light such as laser light. As the light source 12A that outputs coherent light, a solid-state laser light source, a semiconductor laser light source, or the like can be used. When acquiring an OBIRCH (Optical Beam Induced Resistance Change) image or an SDL (Soft Defect Localization (soft defec...
no. 3 Embodiment approach
[0090] Below, refer to Figure 6 , the inspection device 1B according to the third embodiment will be described. In addition, the description of the present embodiment will mainly focus on points different from the above-mentioned first embodiment and second embodiment.
[0091] The inspection device 1B according to the third embodiment specifies a fault location using a photodetection technique called EOP or EOFM (Electro-Optical Frequency Mapping).
[0092] In the inspection apparatus 1B according to the third embodiment, the light from the light source 12A scans the semiconductor device D, and the reflected light from the semiconductor device D is detected by the optical sensor 15A. This reflected light is output to the computer 21B, and an optical reflection image is generated by the analysis unit 21y. Next, in the state where a stimulus signal such as a test pattern is repeatedly applied to the semiconductor device D from the test unit 11, the light output from the ligh...
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Abstract
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