Manufacturing method for target material assembly

A manufacturing method and component technology, applied in the field of target component manufacturing, can solve the problems of low yield rate of sputtering targets, achieve the effect of improving welding strength, improving yield rate, and avoiding adverse effects on quality and performance

Inactive Publication Date: 2017-10-31
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the yield of sputtering targets formed by electron beam welding in the prior art is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method for target material assembly
  • Manufacturing method for target material assembly
  • Manufacturing method for target material assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] It can be seen from the background art that the yield rate of the sputtering target formed by electron beam welding in the prior art is low. combined reference figure 1 with figure 2 , shows a schematic diagram of the principle of an embodiment of electron beam welding, and the reason for the analysis is:

[0023] In the first aluminum alloy 100 that will contain more volatile metals 120 (such as figure 1 shown) and the second aluminum alloy (not shown) that does not contain volatile metals for electron beam welding, the directional high-speed and focused electron beam bombards the first aluminum alloy 100 and the second aluminum alloy to convert kinetic energy into Thermal energy melts the first aluminum alloy 100 and the second aluminum alloy at a partial depth of the weld, and forms a molten pool 110 in the first aluminum alloy 100; as the temperature increases, the first aluminum alloy The volatile metal 120 in the alloy 100 is prone to volatilization, and the h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
penetration depthaaaaaaaaaa
Login to view more

Abstract

The invention provides a manufacturing method for a target material assembly. The manufacturing method comprises the steps that a target blank and a back plate are provided, wherein a face to be welded of the target blank is a first welding face, a face to be welded of the back plate is a second welding face, a face opposite to the first welding face is a back target blank face, faces located between the first welding face and the back target blank face are side target blank faces, a face opposite to the second welding face is a back back plate face, faces located between the second welding face and the back back plate face are side back plate faces, and the contents of volatile metal in the target blank and the back plate are not equal; the first welding face and the second welding face are oppositely arranged and are attached to each other; and first electron beam scanning is carried out on edges of contact faces of the target blank and the back plate through electron beams, and the target material assembly is formed; after first electron beam scanning is completed, the electron beams or the target material assembly is moved so that the electron beams can be projected to the side target blank faces or the side back plate faces where the contents of the volatile metal are low. According to the manufacturing method, after first electron beam scanning is completed, the electron beams or the target material assembly is moved so that the electron beams can project to the side target blank faces or the side back plate faces where the content of the volatile metal are low, the welding intensity is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a target component. Background technique [0002] Sputtering technology is one of the commonly used processes in the field of semiconductor manufacturing. With the increasing development of sputtering technology, sputtering targets play an increasingly important role in sputtering technology. The quality of sputtering targets directly affects the sputtering technology. Film quality after injection. [0003] In the field of sputtering target manufacturing, the sputtering target is composed of a target blank that meets the sputtering performance and a back plate that is combined with the target blank by welding. In the prior art, the welding methods of the target blank and the back plate mainly include brazing, thermal diffusion welding and electron beam welding. [0004] Among them, electron beam welding is a method of using directional high-s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/3414
Inventor 姚力军潘杰相原俊夫大岩一彦王学泽廖培君
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap