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Zinc, bismuth and tellurium heterogeneous phase change nanowire material and preparation method and application thereof

A nanowire and phase transition technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of different compositions and application scopes, and cannot meet the requirements of one-dimensional device assembly and testing, etc. Achieve the effect of being beneficial to market applications, good phase change storage performance, and good uniformity

Active Publication Date: 2017-11-17
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It cannot satisfy the assembly and testing of one-dimensional devices, and its composition and application range are different from this patent

Method used

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  • Zinc, bismuth and tellurium heterogeneous phase change nanowire material and preparation method and application thereof
  • Zinc, bismuth and tellurium heterogeneous phase change nanowire material and preparation method and application thereof
  • Zinc, bismuth and tellurium heterogeneous phase change nanowire material and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] 1. Clean SiO2 2 / / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0030] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0031] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0032] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0033] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0034] 2. Preparation of sputtered gold coating by sputtering method

[0035](a) Put the Au simple substance target, install the substrate, and then seal the vacuum chamber

[0036] (b) Turn on the gas flow meter for 5 minutes, then put it in the valve control state, turn on the mechanical pump to vacuum, when the v...

Embodiment 2

[0048] 1. Clean SiO2 2 / / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0049] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0050] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0051] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0052] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0053] 2. Preparation of sputtered gold coating by sputtering method

[0054] (a) Put the Au simple substance target, install the substrate, and then seal the vacuum chamber

[0055] (b) Turn on the gas flow meter for 5 minutes, then put it in the valve control state, turn on the mechanical pump to vacuum, when the ...

Embodiment 3

[0067] 1. Clean SiO2 2 / / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0068] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0069] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0070] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0071] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0072] 2. Preparation of sputtered gold coating by sputtering method

[0073] (a) Put the Au simple substance target, install the substrate, and then seal the vacuum chamber

[0074] (b) Turn on the gas flow meter for 5 minutes, then put it in the valve control state, turn on the mechanical pump to vacuum, when the ...

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Abstract

The invention relates to a zinc, bismuth and tellurium heterogeneous phase change nanowire material, and a preparation method and application thereof. The material is of a structure with an inner layer and an outer layer, the outer layer is composed of a ZnBi2Te3 nanosheet or nanorod stack, and the inner layer is composed of Zn nanowires. The preparation method is characterized by using solid-liquid gas (VLS) method, placing Zn powder on the front end of Bi2Te3 powder to form Zn nanowires first, and then growing ZnBi2Te3 nanosheets or nanorods on the Zn nanowires to form Zn / ZnBi2Te3 heterostructural nanowires. Compared with the prior art, the material in the invention can be used as a key phase change random access memory material with high thermal stability and low PCRAM operating power consumption.

Description

technical field [0001] The invention relates to materials in the technical field of microelectronics, in particular to a zinc-bismuth-tellurium heterogeneous phase-change nanowire material and a preparation method and application thereof. Background technique [0002] Since the beginning of the 21st century, information has shown explosive growth in mass, digitization and networking, and the level of informatization has become an important symbol to measure the level of modernization and development of a country or region. Informatization is the core driving force to promote urbanization and industrialization, and integrated circuit chips are the cornerstone of informatization. In recent years, the market share of semiconductor memory has increased year by year, and has already occupied about a quarter of the entire integrated circuit. Semiconductor memory includes volatile memory and nonvolatile memory. Volatile memory refers to a memory that cannot retain stored data aft...

Claims

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Application Information

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IPC IPC(8): H01L45/00B82Y30/00
CPCB82Y30/00H10N70/021H10N70/8828
Inventor 翟继卫陈施谕
Owner TONGJI UNIV
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