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Zinc bismuth tellurium heterogeneous phase change nanowire material and its preparation method and application

A nanowire and phase transition technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of not satisfying one-dimensional device assembly and testing, different composition and application scope, etc. Achieving good phase change storage performance, conducive to market-oriented applications, and the effect of fewer operation steps

Active Publication Date: 2020-11-27
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It cannot satisfy the assembly and testing of one-dimensional devices, and its composition and application range are different from this patent

Method used

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  • Zinc bismuth tellurium heterogeneous phase change nanowire material and its preparation method and application
  • Zinc bismuth tellurium heterogeneous phase change nanowire material and its preparation method and application
  • Zinc bismuth tellurium heterogeneous phase change nanowire material and its preparation method and application

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Embodiment 1

[0029] 1. Clean SiO2 2 / / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0030] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0031] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0032] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0033] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0034] 2. Preparation of sputtered gold coating by sputtering method

[0035](a) Put the Au simple substance target, install the substrate, and then seal the vacuum chamber

[0036] (b) Turn on the gas flow meter for 5 minutes, then put it in the valve control state, turn on the mechanical pump to vacuum, when the v...

Embodiment 2

[0048] 1. Clean SiO2 2 / / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0049] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0050] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0051] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0052] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0053] 2. Preparation of sputtered gold coating by sputtering method

[0054] (a) Put the Au simple substance target, install the substrate, and then seal the vacuum chamber

[0055] (b) Turn on the gas flow meter for 5 minutes, then put it in the valve control state, turn on the mechanical pump to vacuum, when the ...

Embodiment 3

[0067] 1. Clean SiO2 2 / / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0068] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0069] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0070] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0071] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0072] 2. Preparation of sputtered gold coating by sputtering method

[0073] (a) Put the Au simple substance target, install the substrate, and then seal the vacuum chamber

[0074] (b) Turn on the gas flow meter for 5 minutes, then put it in the valve control state, turn on the mechanical pump to vacuum, when the ...

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Abstract

The invention relates to a zinc-bismuth-tellurium heterogeneous phase-change nanowire material and its preparation method and application. The material has an inner and outer two-layer structure, and the outer layer is made of ZnBi 2 Te 3 Nanosheets or nanorods are stacked, and the inner layer is composed of Zn nanowires. The preparation method is characterized by using the solid-liquid-gas (VLS) method, placing Zn powder on Bi 2 Te 3 The front end of the powder, so that Zn nanowires are formed first, and then ZnBi is grown on the Zn nanowires 2 Te 3 nanosheets or nanorods to form the overall Zn / ZnBi 2 Te 3 Heterostructured nanowires. Compared with the prior art, the invention can be used as the key material of the phase change memory with high thermal stability and low PCRAM operation power consumption.

Description

technical field [0001] The invention relates to materials in the technical field of microelectronics, in particular to a zinc-bismuth-tellurium heterogeneous phase-change nanowire material and a preparation method and application thereof. Background technique [0002] Since the beginning of the 21st century, information has shown explosive growth in mass, digitization and networking, and the level of informatization has become an important symbol to measure the level of modernization and development of a country or region. Informatization is the core driving force to promote urbanization and industrialization, and integrated circuit chips are the cornerstone of informatization. In recent years, the market share of semiconductor memory has increased year by year, and has already occupied about a quarter of the entire integrated circuit. Semiconductor memory includes volatile memory and nonvolatile memory. Volatile memory refers to a memory that cannot retain stored data aft...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00B82Y30/00
CPCB82Y30/00H10N70/021H10N70/8828
Inventor 翟继卫陈施谕
Owner TONGJI UNIV
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